Abstract:
A method of manufacturing a display substrate includes forming a gate electrode on a base substrate, forming an active pattern which includes an oxide semiconductor and overlaps with the gate electrode, forming an etch stopper which partially covers the active pattern, and performing a plasma treatment process to promote a reduction reaction to portions of the active pattern exposed by the etch stopper, thereby forming a source electrode and a drain electrode.
Abstract:
A display substrate includes a base substrate, a gate pattern, an active pattern and a data metal pattern. The gate pattern includes a gate electrode on the base substrate. The active pattern overlaps the gate electrode and includes a first active layer, a second active layer and a third active layer. The first active layer includes first amorphous silicon (a-Si:H). The second active layer is disposed on the first active layer and includes second amorphous silicon of which a concentration of hydrogen is higher than that of the first amorphous silicon. The third active layer is disposed on the second active layer and includes third amorphous silicon of which a concentration of hydrogen is substantially the same as that of the first amorphous silicon. The data metal pattern is disposed on the active pattern and includes source and drain electrodes spaced apart from each other.