公开(公告)号：US09634071B2

公开(公告)日：2017-04-25

申请号：US14926692

申请日：2015-10-29

Applicant: Samsung Display Co., Ltd.

Inventor： Sea-Hee Lim ,  Sang-Min Hong

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3248 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3211 ,  H01L29/786

Abstract: A thin film transistor includes a semiconductor which is disposed on a substrate and includes a source region, a drain region and a channel region, a gate insulating layer disposed on the semiconductor, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, contact holes defined in the interlayer insulating layer, the contact holes respectively exposing the source region and the drain region of the semiconductor, and a source electrode and a drain electrode which are disposed on the interlayer insulating layer and respectively contact the source region and the drain region through the contact holes, where at least one of the contact holes exposing the source region and the drain region obliquely traverses the semiconductor.

公开(公告)号：US09209205B2

公开(公告)日：2015-12-08

申请号：US14091517

申请日：2013-11-27

Applicant: Samsung Display Co., Ltd.

Inventor： Sea-Hee Lim ,  Sang-Min Hong

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L27/3248 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3211 ,  H01L29/786

Abstract: A thin film transistor includes a semiconductor which is disposed on a substrate and includes a source region, a drain region and a channel region, a gate insulating layer disposed on the semiconductor, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, contact holes defined in the interlayer insulating layer, the contact holes respectively exposing the source region and the drain region of the semiconductor, and a source electrode and a drain electrode which are disposed on the interlayer insulating layer and respectively contact the source region and the drain region through the contact holes, where at least one of the contact holes exposing the source region and the drain region obliquely traverses the semiconductor.

Abstract translation: 薄膜晶体管包括设置在基板上并包括源极区域，漏极区域和沟道区域的半导体，设置在半导体上的栅极绝缘层，设置在栅极绝缘层上的栅电极，层间绝缘层 设置在栅极电极上，限定在层间绝缘层中的接触孔，分别暴露半导体的源极区域和漏极区域的接触孔以及设置在层间绝缘层上并分别接触的源电极和漏电极 源极区域和漏极区域，其中暴露源极区域和漏极区域的至少一个接触孔倾斜地穿过半导体。