Abstract:
An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the substrate, each pixel including a first region from which light is emitted and a second region through which external light is transmitted. The display also includes a plurality of pixel circuit units each formed in the first region and including at least one thin-film transistor, an inorganic insulating film formed in the second region, a transparent conductive film formed over at least a portion of the inorganic insulating film, and an organic insulating film covering the pixel circuit units and at least a portion of the transparent conductive film. The display further includes a plurality of first electrodes formed over the organic insulating film and in the first regions of the pixels.
Abstract:
An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate and a plurality of pixels formed over the substrate, each pixel including a first region from which light is emitted and a second region through which external light is transmitted. The display also includes a plurality of pixel circuit units each formed in the first region and including at least one thin-film transistor, an inorganic insulating film formed in the second region, a transparent conductive film formed over at least a portion of the inorganic insulating film, and an organic insulating film covering the pixel circuit units and at least a portion of the transparent conductive film. The display further includes a plurality of first electrodes formed over the organic insulating film and in the first regions of the pixels.
Abstract:
An organic light-emitting device includes an oxide semiconductor layer disposed in a pixel area. The oxide semiconductor layer includes a channel region, a source region and a drain region. A gate insulating layer is disposed on the oxide semiconductor layer. A gate electrode is disposed on the gate insulating layer. A conductive layer is disposed between the substrate and the oxide semiconductor layer. A bridge electrode is in contact with the conductive layer and one of the source region and the drain region. A first insulation film covers the gate electrode and the bridge electrode. An organic light-emitting diode includes a pixel electrode. An emissive layer is disposed on the pixel electrode, and an opposite electrode is disposed on the emissive layer. At least a portion of the oxide semiconductor layer overlaps the organic light-emitting diode. The conductive layer includes a light transmittance material.
Abstract:
A method of manufacturing a display device is disclosed. In one aspect, the method includes forming an active layer over a substrate, forming a first insulating layer over the active layer, forming a gate electrode over the active layer, and forming an alignment mark over the substrate. The forming of the alignment mark includes forming a first layer including a first pattern and forming a second layer over the first layer and including concave and convex portions formed along the first pattern. The first insulating layer is interposed between the first and second layers.
Abstract:
A method of manufacturing a display device is disclosed. In one aspect, the method includes forming an active layer over a substrate, forming a first insulating layer over the active layer, forming a gate electrode over the active layer, and forming an alignment mark over the substrate. The forming of the alignment mark includes forming a first layer including a first pattern and forming a second layer over the first layer and including concave and convex portions formed along the first pattern. The first insulating layer is interposed between the first and second layers.