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1.
公开(公告)号:US20240313162A1
公开(公告)日:2024-09-19
申请号:US18603318
申请日:2024-03-13
Applicant: Samsung Display Co., LTD.
Inventor: Sang Ho PARK , Sang Ho JEON , Sung Hoon KIM
IPC: H01L33/32 , H01L25/075 , H01L33/00 , H01L33/62
CPC classification number: H01L33/32 , H01L25/0753 , H01L33/0075 , H01L33/62
Abstract: Provided herein is a light emitting element including a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer; an intermediate passivation structure disposed on a side surface of the semiconductor stack structure; and an insulating layer disposed on the intermediate passivation structure, and including a metal oxide. The intermediate passivation structure includes a crystal structure including nitrogen (N) and material forming the semiconductor stack structure.
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2.
公开(公告)号:US20240339561A1
公开(公告)日:2024-10-10
申请号:US18604563
申请日:2024-03-14
Applicant: Samsung Display Co., LTD.
Inventor: Ji Song CHAE , Dae Hyun KIM , Sang Ho PARK , Jae Woong YOO , Chul Jong YOO , Sang Hoon LEE , Joo Hee LEE , Jin Hyuk JANG , Sang Ho JEON , Seon Hong CHOI
CPC classification number: H01L33/025 , H01L25/167 , H01L33/0066 , H01L33/44 , H01L2933/0025
Abstract: A light emitting element may include a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer disposed on a side portion of the semiconductor stack structure. The semiconductor stack structure may include a fluorinated area disposed adjacent to the insulating layer.
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公开(公告)号:US20220013737A1
公开(公告)日:2022-01-13
申请号:US17281665
申请日:2019-07-24
Applicant: Samsung Display Co., Ltd.
Inventor: Sun Woo KANG , Sang Ho JEON , Young Mi CHO
Abstract: Provided is an organic light-emitting device including: an anode; a cathode facing the anode; and an organic layer arranged between the anode and the cathode and including an emission layer and an auxiliary layer, wherein the emission layer is in direct contact with the auxiliary layer, the emission layer includes a dopant, the auxiliary layer includes a first compound and a second compound, and the dopant, the first compound, and the second compound satisfy a certain equation.
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4.
公开(公告)号:US20240097069A1
公开(公告)日:2024-03-21
申请号:US18296016
申请日:2023-04-05
Applicant: Samsung Display Co., LTD.
Inventor: Sang Ho JEON , Ji Song CHAE
CPC classification number: H01L33/06 , H01L33/0075 , H01L33/0083 , H01L33/28 , H01L33/32 , H01L25/167
Abstract: A light emitting element includes an N-type semiconductor layer including a zinc oxide semiconductor, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The active layer has a quantum well including a barrier layer and a well layer including zinc oxide.
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公开(公告)号:US20240038748A1
公开(公告)日:2024-02-01
申请号:US18348995
申请日:2023-07-07
Applicant: Samsung Display Co., LTD.
Inventor: Jae Woong YOO , Jin Hyuk JANG , Sang Ho JEON
IPC: H01L25/16
CPC classification number: H01L25/167 , H01L33/20
Abstract: A display device including: electrodes on a base layer; an insulating layer on the electrodes and including a first protruding pattern and a second protruding pattern; light emitting elements on the insulating layer, a light emitting element from among the light emitting elements including a first end and a second end, wherein the light emitting elements include a first light emitting element, the first end of the first light emitting element being adjacent to the first protruding pattern, and the second end of the first light emitting element being adjacent to the second protruding pattern; a first connecting electrode electrically connected to the first end of the first light emitting element and including a first base portion and first protruding portions connected to the first base portion; and a second connecting electrode electrically connected to the second end of the first light emitting element.
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6.
公开(公告)号:US20240266475A1
公开(公告)日:2024-08-08
申请号:US18636248
申请日:2024-04-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jun Bo SIM , Chang Hee LEE , Yun Hyuk KO , Sang Ho JEON , Jae Kook HA
IPC: H01L33/44 , H01L25/075 , H01L25/16 , H01L33/00 , H01L33/62
CPC classification number: H01L33/44 , H01L25/0753 , H01L25/167 , H01L33/007 , H01L33/0075 , H01L33/0093 , H01L33/62 , H01L2933/0025
Abstract: A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.
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7.
公开(公告)号:US20240145636A1
公开(公告)日:2024-05-02
申请号:US18499136
申请日:2023-10-31
Applicant: Samsung Display Co., LTD.
Inventor: Sang Ho PARK , Sang Ho JEON , Sung Hoon KIM
CPC classification number: H01L33/44 , H01L27/156 , H01L33/0075 , H01L33/24 , H01L33/32 , H01L2933/0025
Abstract: One or more embodiments of the disclosure provides a light-emitting element including an N-type semiconductor layer, a P-type semiconductor layer, an active layer between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer on a semiconductor stacked structure including the N-type semiconductor layer, the P-type semiconductor layer, and the active layer, and including a first insulating structure and a second insulating structure, the first insulating structure being between the semiconductor stacked structure and the second insulating structure and including a metal oxide including two or more metal elements.
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公开(公告)号:US20230275187A1
公开(公告)日:2023-08-31
申请号:US17978379
申请日:2022-11-01
Applicant: Samsung Display Co., LTD.
Inventor: Sang Ho JEON , Ji Song CHAE , Sang Hoon LEE , Jin Hyuk JANG
IPC: H01L33/32 , H01L33/38 , H01L33/62 , H01L33/20 , H01L25/075
CPC classification number: H01L33/32 , H01L33/382 , H01L33/62 , H01L33/20 , H01L25/0753
Abstract: A light-emitting element and a display device including the same are provided. The light-emitting element includes a first semiconductor layer doped with a first-type dopant, a second semiconductor layer doped with a second-type dopant, and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The light-emitting layer includes at least one first material layer and at least one second material layer, wherein the at least one first material layer includes a zinc oxide (ZnO)-based material, and the at least one second material layer includes a gallium nitride (GaN)-based material.
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公开(公告)号:US20220158039A1
公开(公告)日:2022-05-19
申请号:US17350949
申请日:2021-06-17
Applicant: Samsung Display Co., Ltd.
Inventor: Jun Bo SIM , Chang Hee LEE , Yun Hyuk KO , Sang Ho JEON , Jae Kook HA
IPC: H01L33/44 , H01L33/00 , H01L25/075 , H01L25/16 , H01L33/62
Abstract: A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.
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公开(公告)号:US20240397765A1
公开(公告)日:2024-11-28
申请号:US18402054
申请日:2024-01-02
Applicant: Samsung Display Co., LTD.
Inventor: Jae Woong YOO , Sang Ho PARK , Jin Hyuk JANG , Sang Ho JEON
IPC: H10K59/131 , H10K59/123 , H10K59/32 , H10K102/10
Abstract: A display device includes a first lower electrode disposed on a substrate, a first light emitting element disposed on the first lower electrode, a second electrode disposed on the first light emitting element, a second light emitting element disposed on the second electrode, and a first upper electrode disposed on the second light emitting element. The first lower electrode and the first upper electrode are connected to each other.
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