公开(公告)号：US20250024708A1

公开(公告)日：2025-01-16

申请号：US18904654

申请日：2024-10-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung KIM ,  Young Gil PARK ,  Soo lm JEONG

IPC: H10K59/121 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K59/40

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20210066555A1

公开(公告)日：2021-03-04

申请号：US16941102

申请日：2020-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum HAN ,  Young Gil PARK ,  Jung Hwa PARK ,  Na Ri AHN ,  Soo Im Jeong ,  Ki Nam KIM ,  Moon Sung KIM

IPC: H01L33/58 ,  H01L33/40 ,  H01L27/12 ,  H01L29/24

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US20220028947A1

公开(公告)日：2022-01-27

申请号：US17373602

申请日：2021-07-12

Applicant: Samsung Display Co., Ltd.

Inventor： Jae Bum HAN ,  Moon Sung KIM ,  Young Gil PARK ,  Soo Im JEONG

IPC: H01L27/32

Abstract: A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

公开(公告)号：US20240379918A1

公开(公告)日：2024-11-14

申请号：US18641481

申请日：2024-04-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jae-Bum HAN ,  Young Gil PARK ,  Jung Hwa PARK ,  Na Ri AHN ,  Soo Im Jeong ,  Ki Nam KIM ,  Moon Sung KIM

IPC: H01L33/58 ,  H01L27/12 ,  H01L29/24 ,  H01L33/40

Abstract: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.