公开(公告)号：US20220320391A1

公开(公告)日：2022-10-06

申请号：US17843052

申请日：2022-06-17

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jae-Bum HAN ,  Young Gil Park ,  Jung Hwa Park ,  Na Ri Ahn ,  Soo Im Jeong ,  Ki Nam Kim ,  Moon Sung Kim

IPC分类号： H01L33/58 ,  H01L33/40 ,  H01L29/24 ,  H01L27/12

摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

公开(公告)号：US20210066555A1

公开(公告)日：2021-03-04

申请号：US16941102

申请日：2020-07-28

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jae-Bum HAN ,  Young Gil PARK ,  Jung Hwa PARK ,  Na Ri AHN ,  Soo Im Jeong ,  Ki Nam KIM ,  Moon Sung KIM

IPC分类号： H01L33/58 ,  H01L33/40 ,  H01L27/12 ,  H01L29/24

摘要： A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.