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公开(公告)号:US12067942B2
公开(公告)日:2024-08-20
申请号:US18085260
申请日:2022-12-20
Applicant: Samsung Display Co., Ltd.
Inventor: Wonjun Lee , Cholho Kim , Mihyeon Jo
IPC: G09G3/3233 , G06V40/13
CPC classification number: G09G3/3233 , G06V40/1318 , G09G2300/0426 , G09G2300/0819 , G09G2300/0842 , G09G2310/08 , G09G2354/00
Abstract: A display device includes a plurality of pixels, each of which includes a light emitting element and a pixel driving circuit and a plurality of sensors, each of which includes a light receiving element and a sensor driving circuit. The sensor driving circuit includes a first reset transistor, a second reset transistor, a sensing capacitor, an amplification transistor, and an output transistor. The first reset transistor includes a first electrode receiving a reset voltage, a second electrode connected to a first sensing node, and a third electrode receiving a reset control signal. The second reset transistor includes a first electrode receiving the reset voltage, a second electrode connected to a second sensing node, and a third electrode receiving the reset control signal. The sensing capacitor is positioned between the first sensing node and the second sensing node.
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公开(公告)号:US11538422B2
公开(公告)日:2022-12-27
申请号:US17463518
申请日:2021-08-31
Applicant: Samsung Display Co., LTD.
Inventor: Wonjun Lee , Mihyeon Jo , Cholho Kim
IPC: G09G3/3291 , G09G3/3266 , G09G3/3233
Abstract: A pixel of a light emitting display device includes: a switching transistor which transfers a data voltage in response to a gate writing signal, a storage capacitor which stores a storage voltage, a driving transistor which generates a driving current based on the storage voltage stored in the storage capacitor, an emission transistor which selectively forms a path of the driving current in response to an emission signal, a light emitting diode which emits light based on the driving current, and a diode initialization transistor which transfers an initialization voltage to the light emitting diode in response to the emission signal. The storage voltage corresponds to a value obtained by subtracting a threshold voltage of the driving transistor from the data voltage.
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