公开(公告)号：US20220399420A1

公开(公告)日：2022-12-15

申请号：US17679691

申请日：2022-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jaehwan CHU ,  Meejae KANG ,  Keunwoo KIM ,  Doona KIM ,  Sangsub KIM ,  Hanbit KIM ,  Dokyeong LEE ,  Yongsu LEE

IPC: H01L27/32

Abstract: A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

公开(公告)号：US20220130932A1

公开(公告)日：2022-04-28

申请号：US17571895

申请日：2022-01-10

Applicant: Samsung Display Co., Ltd.

Inventor： Thanh Tien NGUYEN ,  Meejae KANG ,  Yongsu LEE ,  Sanggun CHOI

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.

公开(公告)号：US20210249542A1

公开(公告)日：2021-08-12

申请号：US17086545

申请日：2020-11-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaeseob LEE ,  Meejae KANG ,  Yoonho KHANG ,  Keunwoo KIM ,  Hanbit KIM ,  Thanhtien NGUYEN

IPC: H01L29/786 ,  H01L27/32

Abstract: A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in the off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.

公开(公告)号：US20200312937A1

公开(公告)日：2020-10-01

申请号：US16737653

申请日：2020-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Thanh Tien NGUYEN ,  Meejae KANG ,  Yongsu LEE ,  Sanggun CHOI

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.

公开(公告)号：US20190181360A1

公开(公告)日：2019-06-13

申请号：US16202595

申请日：2018-11-28

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun CHA ,  Sanggun CHOI ,  Meejae KANG ,  Sanggab KIM ,  Joon woo BAE ,  Thanh Tien NGUYEN ,  Kyoungwon LEE ,  Yongsu LEE

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/50 ,  H01L51/56

Abstract: A display substrate includes a first conductive layer on a base substrate, a first insulation layer on the first conductive layer, a second conductive layer on the first insulation layer, a second insulation layer on the second conductive layer, and a third conductive layer on the second insulation layer. The third conductive layer is connected to the first conductive layer and the second conductive layer through a contact hole passing through the first insulation layer, the second conductive layer, and the second insulation layer. A sidewall of the contact hole has a stepped shape.