Abstract:
An organic light emitting diode display includes: a substrate; a semiconductor layer formed on the substrate and including a switching semiconductor layer, a driving semiconductor layer, and a light emission control semiconductor layer spaced apart from each other; a first gate insulating layer covering the semiconductor layer; a light emission control gate electrode formed on the first gate insulating layer and overlapping the light emission control semiconductor layer; a second gate insulating layer covering the light emission control gate electrode; a switching gate electrode and a driving gate electrode formed on the second gate insulating layer and respectively overlapping the switching semiconductor layer and the driving semiconductor layer; and an interlayer insulating layer covering the switching gate electrode, the driving gate electrode, and the second gate insulating layer. A doping concentration of a channel region of the driving semiconductor layer is higher than a doping concentration of a channel region of the light emission control semiconductor layer.
Abstract:
An organic light emitting diode display according to the present invention includes a substrate and a plurality of pixels formed on the substrate. One pixel includes: a scan line formed on the substrate and transmitting a scan signal; a data line and a driving voltage line crossing the scan line and transmitting a data signal and a driving voltage, respectively; a switching thin film transistor connected to the scan line and the data line; a driving thin film transistor connected to a switching drain electrode of the switching thin film transistor; and an organic light emitting diode connected to a driving drain electrode of the driving thin film transistor. The plurality of pixels includes a separation pixel at which the driving voltage line is separated and a connection pixel at which the driving voltage line is connected.