公开(公告)号：US11171193B2

公开(公告)日：2021-11-09

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Dohyun Kwon ,  Jonghan Jeong ,  Jonghyun Choi ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US10332950B2

公开(公告)日：2019-06-25

申请号：US15684506

申请日：2017-08-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Changyong Jeong ,  Heejun Kwak ,  Taewook Kang ,  Mugyeom Kim ,  Jaeseob Lee ,  Jonghan Jeong

IPC: H01L27/32

Abstract: An organic light emitting display device includes a folding part configured to be folded, and a flat part adjacent to the folding part. The folding part includes a first pixel. The flat part includes a second pixel. The first pixel includes a first organic light emitting diode, a first driving transistor and a first control transistor. The first driving transistor includes a first semiconductor pattern. The first control transistor includes a second semiconductor pattern. The second pixel includes a second organic light emitting diode, a second driving transistor and second control transistor. The second driving transistor includes a third semiconductor pattern. The second control transistor includes a fourth semiconductor pattern. At least one of the first or second semiconductor patterns includes an oxide semiconductor or a polycrystalline silicon, and each of the third and fourth semiconductor patterns includes the other of the oxide semiconductor and the polycrystalline silicon.

公开(公告)号：US11751434B2

公开(公告)日：2023-09-05

申请号：US17453522

申请日：2021-11-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Dohyun Kwon ,  Jonghan Jeong ,  Jonghyun Choi ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H10K59/121 ,  G09G3/3225 ,  H10K59/124 ,  G09G3/3233 ,  H10K59/126 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12 ,  H01L29/786

CPC classification number: H10K59/1213 ,  G09G3/3225 ,  G09G3/3233 ,  H10K59/124 ,  H10K59/1216 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/7869 ,  H01L29/78633 ,  H01L29/78675 ,  H10K59/126

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20220059634A1

公开(公告)日：2022-02-24

申请号：US17453522

申请日：2021-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok Son ,  Dohyun Kwon ,  Jonghan Jeong ,  Jonghyun Choi ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihn Lim

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20180061914A1

公开(公告)日：2018-03-01

申请号：US15684506

申请日：2017-08-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Changyong Jeong ,  Heejune Kwak ,  Taewook Kang ,  Mugyeom Kim ,  Jaeseob Lee ,  Jonghan Jeong

IPC: H01L27/32

CPC classification number: H01L27/3246 ,  H01L27/3211 ,  H01L27/3248 ,  H01L27/3262 ,  H01L2251/5338

Abstract: An organic light emitting display device includes a folding part configured to be folded, and a flat part adjacent to the folding part. The folding part includes a first pixel. The flat part includes a second pixel. The first pixel includes a first organic light emitting diode, a first driving transistor and a first control transistor. The first driving transistor includes a first semiconductor pattern. The first control transistor includes a second semiconductor pattern. The second pixel includes a second organic light emitting diode, a second driving transistor and second control transistor. The second driving transistor includes a third semiconductor pattern. The second control transistor includes a fourth semiconductor pattern. At least one of the first or second semiconductor patterns includes an oxide semiconductor or a polycrystalline silicon, and each of the third and fourth semiconductor patterns includes the other of the oxide semiconductor and the polycrystalline silicon.