公开(公告)号：US20200313108A1

公开(公告)日：2020-10-01

申请号：US16714389

申请日：2019-12-13

Applicant: Samsung Display Co., Ltd.

Inventor： Choelmin JANG ,  Byunghyuk KWON ,  Changhee LEE ,  Myungsoo HUH ,  Cheollae ROH ,  Jaehoon KIM ,  Jeong Hye CHOI

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  C09K11/08

Abstract: A light emitting diode according to embodiments of the present disclosure includes a first electrode, a second electrode opposite the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including a quantum dot, a first charge transfer layer between the first electrode and the emission layer, a second charge transfer layer between the second electrode and the emission layer, and an insulating layer in at least one position between the first charge transfer layer and the emission layer, and/or between the second charge transfer layer and the emission layer, wherein the insulating layer includes an inorganic material. The light emitting diode and a display device including the same show improved life characteristics and emission efficiency properties.

公开(公告)号：US20180358386A1

公开(公告)日：2018-12-13

申请号：US15971435

申请日：2018-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BYOUNG KWON CHOO ,  Joon Hwa BAE ,  Hyun Jin CHO ,  Jun Hyuk CHEON ,  Zi Yeon YOON ,  Woo Jin CHO ,  Sung Hwan CHOI ,  Jeong Hye CHOI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/321

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.