公开(公告)号：US20220384696A1

公开(公告)日：2022-12-01

申请号：US17565088

申请日：2021-12-29

Applicant: Samsung Display Co., Ltd.

Inventor： SHINHYUK YANG ,  JEEHOON KIM ,  KYUMIN KIM ,  JONGMOO HUH

IPC: H01L33/62 ,  H01L33/38

Abstract: A display device includes a driving element disposed in a display area, an emission element disposed in the display area and electrically connected to the driving element, and a connection pad disposed in a pad area adjacent to the display area and electrically connected to the driving element. The connection pad includes a first pad conductive layer including a metal and a second pad conductive layer including indium tin zinc oxide (ITZO). The indium tin zinc oxide of the second pad conductive layer includes about 20 at % to about 35 at % of indium (In), about 2 at % to about 20 at % of zinc (Zn), about 4 at % to about 6 at % of tin (Sn), and a remainder of oxygen (O).

公开(公告)号：US20220157912A1

公开(公告)日：2022-05-19

申请号：US17410274

申请日：2021-08-24

Applicant: Samsung Display Co., Ltd.

Inventor： HUI-WON YANG ,  KYUMIN KIM ,  JAESEOL CHO ,  JONGMOO HUH

IPC: H01L27/32

Abstract: A display device includes a lower electrode extending in a first direction and a first active layer disposed on the lower electrode and extending in a second direction perpendicular to the first direction. The first active layer includes a first area having a first width in the first direction, a second area having a second width wider than the first width in the first direction, and overlapping the lower electrode and a third area between the first area and the second area and connecting the first area to the second area.

公开(公告)号：US20190074276A1

公开(公告)日：2019-03-07

申请号：US16124519

申请日：2018-09-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JONGMOO HUH ,  DONGWON KIM ,  SHINHYUK YANG

IPC: H01L27/02 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L27/0296 ,  H01L27/1218 ,  H01L27/323 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5256 ,  H01L2251/5338

Abstract: A display apparatus that can reduce defects caused by static electricity, includes a substrate unit that includes at least one organic insulating layer, at least one inorganic insulating layer, and a first conductive layer that includes doped amorphous silicon (a-Si) that is disposed between the at least one organic insulating layer and the at least one inorganic insulating layer; and a thin film transistor unit disposed on the substrate portion and that includes a thin film transistor.