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1.发明授权Oxide semiconductor, oxide semiconductor thin film, and thin film transistor including the same 有权氧化物半导体，氧化物半导体薄膜和包括该氧化物半导体薄膜的薄膜晶体管公开(公告)号：US09012909B2
公开(公告)日：2015-04-21
申请号：US14096741
申请日：2013-12-04
Applicant: Samsung Display Co., Ltd.
Inventor： IL-Joon Kang , Young-Mi Cho
IPC: H01L29/10 , H01L29/786
CPC classification number: H01L29/7869
Abstract: An oxide semiconductor includes zinc (Zn), tin (Sn), and at least one of Ag and Au.
Abstract translation: 氧化物半导体包括锌（Zn），锡（Sn）以及Ag和Au中的至少一种。
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