公开(公告)号：US20180254433A1

公开(公告)日：2018-09-06

申请号：US15840449

申请日：2017-12-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chul Hyun CHOI ,  Ji Hye MOON ,  Sun A YANG ,  Hyuk Sang JUN

IPC: H01L51/52

CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L2251/558

Abstract: A display device includes: a substrate on which a display area and a non-display area are defined; a plurality of pixels disposed on the substrate in the display area; and an encapsulation layer disposed on the pixels to cover the pixels, where the encapsulation layer including a first region and a second region different from the first region. The encapsulation layers has a thickness in a range of 1.75 μm to 4.0 μm, and the ratio of a thickness of the second region of the encapsulation layer to a thickness of the first region of the encapsulation layer is in a range of 0.95 to 1.0.

公开(公告)号：US20220140290A1

公开(公告)日：2022-05-05

申请号：US17452546

申请日：2021-10-27

Applicant: Samsung Display Co., Ltd.

Inventor： Chul Hyun CHOI ,  Min Jae KIM ,  Kyung Hee LEE ,  Suk Jin LEE ,  In Hwa LEE ,  Hyuk Sang JUN

IPC: H01L51/52 ,  H01L27/32

Abstract: A display device includes a substrate; a light-emitting element on the substrate; a capping layer on the light-emitting element; a first inorganic encapsulation layer on the capping layer; an organic encapsulation layer on the first inorganic encapsulation layer; and a second inorganic encapsulation layer on the organic encapsulation layer. The first inorganic encapsulation layer includes a first sub-inorganic encapsulation layer between the capping layer and the organic encapsulation layer, and a second sub-inorganic encapsulation layer between the first sub-inorganic encapsulation layer and the organic encapsulation layer.

公开(公告)号：US20190043929A1

公开(公告)日：2019-02-07

申请号：US15939208

申请日：2018-03-28

Applicant: Samsung Display Co., Ltd.

Inventor： Chul Hyun CHOI ,  Hyun Shik LEE ,  Hyuk Sang JUN

IPC: H01L27/32 ,  H01L51/52 ,  H01L33/52 ,  H01L33/40

CPC classification number: H01L27/3206 ,  H01L27/3244 ,  H01L33/40 ,  H01L33/52 ,  H01L51/0081 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5275 ,  H01L2251/558

Abstract: A light-emitting diode according to an exemplary embodiment includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; and a first capping layer positioned on the first electrode, wherein the first capping layer includes at least one among LiF, MgF2, AlF3, NaF, and AlOx, and a thickness of the first capping layer is 30 nm to 40 nm.