公开(公告)号：US20240049572A1

公开(公告)日：2024-02-08

申请号：US18348219

申请日：2023-07-06

Applicant: Samsung Display Co., Ltd.

Inventor： Kyongjun Kim ,  Seojin Kim ,  Heejin Jeon

IPC: H10K59/80 ,  H10K59/40 ,  H10K59/131 ,  H10K59/123

CPC classification number: H10K59/873 ,  H10K59/40 ,  H10K59/131 ,  H10K59/123

Abstract: A display panel includes: a substrate including a display area, a non-display area outside the display area, and a pad area in the non-display area; a display portion in the display area and including a subpixel; and a pad portion in the pad area and including a pad, wherein the pad comprises: a first conductive layer on the substrate; a first inorganic insulating layer covering the first conductive layer and including a first contact hole exposing at least a part of the first conductive layer; a second conductive layer on the first inorganic insulating layer and in contact with the first conductive layer through the first contact hole; and a third conductive layer covering the second conductive layer, and an edge of the third conductive layer is covered with at least one transparent conductive material layer.

公开(公告)号：US20230232660A1

公开(公告)日：2023-07-20

申请号：US17891986

申请日：2022-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： Kyongjun Kim ,  Yongbin Kim ,  Sohyun Shin ,  Gunwoo Yang ,  Dongjin Lee ,  Heejin Jeon ,  Hyunyoung Choi

IPC: H01L27/32 ,  G09G3/3233

CPC classification number: H01L27/326 ,  H01L27/3234 ,  H01L27/3272 ,  G09G3/3233 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2300/0819 ,  G09G2300/0426 ,  G09G2320/0242 ,  G09G2320/0233

Abstract: A display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a first driving transistor and a first storage capacitor having a first lower storage electrode connected to a gate of the first driving transistor and a first upper storage electrode overlapping the first lower storage electrode. The second pixel circuit includes a second driving transistor and a second storage capacitor including a second lower storage electrode connected to a gate of the second driving transistor and a second upper storage electrode overlapping the second lower storage electrode. A second overlapping area of the second lower storage electrode and the second upper storage electrode is about twice to about four times a first overlapping area of the first lower storage electrode and the first upper storage electrode.