公开(公告)号：US11563126B2

公开(公告)日：2023-01-24

申请号：US17348188

申请日：2021-06-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US11063155B2

公开(公告)日：2021-07-13

申请号：US16414266

申请日：2019-05-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US20240074251A1

公开(公告)日：2024-02-29

申请号：US18454505

申请日：2023-08-23

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Son ,  Sola Lee ,  Kiyoung Kim ,  Jongseok Kim

IPC: H10K59/124 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K59/1201

Abstract: A display apparatus includes a substrate including a component area including a transmission area, a main area outside the component area, and a bending area bent based on a bending axis, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer, and a first gate insulating layer overlapping the first semiconductor layer and including a 1-1st opening corresponding to the bending area, and a 1-1st through-hole exposing a portion of the first semiconductor layer. A first acute angle formed by an inner surface of the 1-1st opening with respect to an upper surface of the substrate is less than a first contact acute angle formed by an inner surface of the 1-1st through-hole with respect to the upper surface of the substrate.

公开(公告)号：US20210313474A1

公开(公告)日：2021-10-07

申请号：US17348188

申请日：2021-06-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kohei Ebisuno ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

公开(公告)号：US20250008786A1

公开(公告)日：2025-01-02

申请号：US18749009

申请日：2024-06-20

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Son ,  Sola Lee ,  Jongseok Kim ,  Seongjun Lee

IPC: H10K59/126 ,  H10K59/124 ,  H10K59/65 ,  H10K59/80

Abstract: A display panel includes a substrate including a transmissive area, a transistor over the substrate and adjacent to the transmissive area, a light-emitting diode electrically connected to the transistor, a bottom metal layer disposed between the substrate and the transistor and overlapping the transistor, and a plurality of inorganic insulation layers between the bottom metal layer and the light-emitting diode. An opening penetrating at least one of the inorganic insulation layers overlaps the bottom metal layer and thereby, an electronic device with improved image quality of the display panel may be implemented by preventing light emitted from components from entering thin-film transistors.

公开(公告)号：US11751447B2

公开(公告)日：2023-09-05

申请号：US17177054

申请日：2021-02-16

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Son ,  Hwajeong Kim ,  Kiho Bang ,  Dongwon Kim ,  Jingoo Jung

IPC: H10K59/131

CPC classification number: H10K59/131

Abstract: A display apparatus may include the following elements: a substrate including a display area and a peripheral area outside the display area; first data lines lengthwise in a first direction and arranged on the display area; first wires arranged on the display area; and a driving circuit arranged on the peripheral area and electrically connected through the first wires to the first data lines. Branches may protrude from bodies of the first wires. Two branches among the branches may protrude toward each other. End edges of the two branches may be spaced apart in a second direction different from the first direction.

公开(公告)号：US20210265451A1

公开(公告)日：2021-08-26

申请号：US17177054

申请日：2021-02-16

Applicant: Samsung Display Co., Ltd.

Inventor： Donghyun Son ,  Hwajeong Kim ,  Kiho Bang ,  Dongwon Kim ,  Jingoo Jung

IPC: H01L27/32

Abstract: A display apparatus may include the following elements: a substrate including a display area and a peripheral area outside the display area; first data lines lengthwise in a first direction and arranged on the display area; first wires arranged on the display area; and a driving circuit arranged on the peripheral area and electrically connected through the first wires to the first data lines. Branches may protrude from bodies of the first wires. Two branches among the branches may protrude toward each other. End edges of the two branches may be spaced apart in a second direction different from the first direction.

公开(公告)号：US20200185537A1

公开(公告)日：2020-06-11

申请号：US16414266

申请日：2019-05-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KOHEI EBISUNO ,  Sungjun Kim ,  Donghyun Son ,  Jaesoo Jung ,  Sunghoon Moon ,  Jingoo Jung

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.