Evaporating method for forming thin film
    1.
    发明授权
    Evaporating method for forming thin film 有权
    用于形成薄膜的蒸发方法

    公开(公告)号:US08691339B2

    公开(公告)日:2014-04-08

    申请号:US14029781

    申请日:2013-09-17

    Abstract: A method of forming a film on a substrate includes depositing first and second evaporating source materials respective from first and second evaporating sources onto the substrate while moving the evaporating sources together with respect to the substrate, the first and second evaporating source materials being different from each other and positioned to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first and second evaporating source materials and a non-overlapping deposition region of the second source material such that when the evaporating sources are moved, a film is formed to include a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

    Abstract translation: 一种在衬底上形成膜的方法包括将第一和第二蒸发源相应于第一和第二蒸发源的第一和第二蒸发源材料沉积到衬底上,同时相对于衬底移动蒸发源,第一和第二蒸发源材料与每个 并且定位成提供第一蒸发源材料的不重叠的沉积区域,第一和第二蒸发源材料的重叠沉积区域和第二源材料的非重叠沉积区域,使得当蒸发源移动时 形成膜,以包括仅第一蒸发源材料的沉积的第一层,作为第一蒸发源材料和第二蒸发源材料的混合物沉积的第二层,以及第三层 仅沉积第二源材料。

    EVAPORATING METHOD FOR FORMING THIN FILM
    2.
    发明申请
    EVAPORATING METHOD FOR FORMING THIN FILM 有权
    用于形成薄膜的蒸发方法

    公开(公告)号:US20140017395A1

    公开(公告)日:2014-01-16

    申请号:US14029781

    申请日:2013-09-17

    Abstract: A method of forming a film on a substrate includes depositing first and second evaporating source materials respective from first and second evaporating sources onto the substrate while moving the evaporating sources together with respect to the substrate, the first and second evaporating source materials being different from each other and positioned to provide a non-overlapping deposition region of the first evaporating source material, an overlapping deposition region of the first and second evaporating source materials and a non-overlapping deposition region of the second source material such that when the evaporating sources are moved, a film is formed to include a first layer that is a deposition of only the first evaporating source material, a second layer that is a deposition of a mixture of the first evaporating source material and the second evaporating source material and a third layer that is a deposition of only the second source material.

    Abstract translation: 一种在衬底上形成膜的方法包括将第一和第二蒸发源相应于第一和第二蒸发源的第一和第二蒸发源材料沉积到衬底上,同时相对于衬底移动蒸发源,第一和第二蒸发源材料与每个 并且定位成提供第一蒸发源材料的不重叠的沉积区域,第一和第二蒸发源材料的重叠沉积区域和第二源材料的非重叠沉积区域,使得当蒸发源移动时 形成膜,以包括仅第一蒸发源材料的沉积的第一层,作为第一蒸发源材料和第二蒸发源材料的混合物沉积的第二层,以及第三层 仅沉积第二源材料。

Patent Agency Ranking