知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.016 seconds)

    Organic light emitting diode display and method of manufacturing the same
    2.
    发明授权
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US09412297B2

    公开(公告)日：2016-08-09

    申请号：US14014681

    申请日：2013-08-30

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Deok-Hoi Kim

    IPC: G09G3/32 ,  H01L27/12

    CPC classification number: G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/045 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L51/56

    Abstract: An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.

    Abstract translation: 有机发光二极管显示器包括显示图像的像素部分和围绕像素部分的周边部分，在衬底上的像素部分上包括像素切换半导体层的半导体层，驱动半导体层和外围交换半导体 在半导体层上的第一栅极绝缘层，在周边部分的第一栅极绝缘层上的外围开关栅极电极，覆盖外围开关栅极电极和第一栅极绝缘层的第二栅极绝缘层， 在像素部分的第二栅极绝缘层上的像素开关栅电极和驱动栅电极，以及覆盖像素开关栅电极，驱动栅电极和第二栅极绝缘层的第三栅极绝缘层。

    Organic light emitting diode display having high resolution and method of manufacturing the same
    3.
    发明授权
    Organic light emitting diode display having high resolution and method of manufacturing the same 有权
    具有高分辨率的有机发光二极管显示器及其制造方法

    公开(公告)号：US09287528B2

    公开(公告)日：2016-03-15

    申请号：US14063745

    申请日：2013-10-25

    Applicant: Samsung Display Co., Ltd.

    Inventor： Deok-Hoi Kim

    IPC: H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/56 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

    CPC classification number: H01L51/56 ,  H01L21/823418 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78696

    Abstract: An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.

    Abstract translation: 一种有机发光二极管显示装置，包括具有像素部和周边部的基板，形成在像素部上的像素切换用半导体层和驱动用半导体层的半导体层以及形成于该周边部的周边切换半导体层 。 在半导体层上形成第一栅极绝缘层。 在周边部分的第一栅极绝缘层上形成外围开关栅电极，在像素部分的第一栅极绝缘层上形成像素开关栅电极和驱动栅电极。 形成在外围切换半导体层中的外围切换低浓度掺杂区域的长度可以大于形成在像素切换半导体层和驱动半导体层中的像素切换低浓度掺杂区域和驱动低浓度掺杂区域的长度 ， 分别。

    Method of manufacturing a flat panel display device
    4.
    发明授权
    Method of manufacturing a flat panel display device 有权
    制造平板显示装置的方法

    公开(公告)号：US09012273B2

    公开(公告)日：2015-04-21

    申请号：US14163873

    申请日：2014-01-24

    Applicant: Samsung Display Co., Ltd.

    Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

    IPC: H01L27/12 ,  H01L49/02 ,  G02F1/1362

    CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

    Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

    Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。

    DISPLAY DEVICE
    6.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20160197130A1

    公开(公告)日：2016-07-07

    申请号：US14866288

    申请日：2015-09-25

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Elly Gil ,  Deok-Hoi Kim ,  Jae-Hyun Lee

    IPC: H01L27/32 ,  H01L51/52

    CPC classification number: H01L27/3265 ,  H01L27/1255

    Abstract: A display device including: a first conductive pattern group including: a scan line and a gate electrode spaced from the scan line, a driving semiconductor pattern below the first conductive pattern group and including: a channel region overlapping the gate electrode; a source region; and a drain region, the channel region between the source region and the drain region; a second conductive pattern group on the first conductive pattern group and including: a data line crossing the scan line; a drain electrode coupled to the drain region; a pixel electrode extending from the drain electrode; a first coupling pattern coupled to the gate electrode; and a driving voltage line coupled to the source region; and a capacitor coupled to the first coupling pattern and the driving voltage line and overlapping the pixel electrode.

    Abstract translation: 一种显示装置，包括：第一导电图案组，包括：扫描线和与扫描线间隔开的栅电极，位于第一导电图案组下方的驱动半导体图案，包括：与栅电极重叠的沟道区; 源区; 和漏极区域，源极区域和漏极区域之间的沟道区域; 在所述第一导电图案组上的第二导电图案组，并且包括：穿过所述扫描线的数据线; 耦合到所述漏极区的漏电极; 从所述漏电极延伸的像素电极; 耦合到所述栅电极的第一耦合图案; 以及耦合到所述源极区域的驱动电压线; 以及耦合到第一耦合图案和驱动电压线并与像素电极重叠的电容器。

    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号：US20140141574A1

    公开(公告)日：2014-05-22

    申请号：US14163873

    申请日：2014-01-24

    Applicant: Samsung Display Co., Ltd.

    Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

    IPC: H01L27/12

    CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

    Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

    Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。

Patent Agency Ranking