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公开(公告)号：US20220085341A1
公开(公告)日：2022-03-17
申请号：US17308671
申请日：2021-05-05
Applicant: Samsung Display Co., LTD.
Inventor： Dae Soo KIM , Sang Gab KIM , Yun Jong YEO , Ju Hee LEE , Soo Beom JO , Dae Won CHOI
Abstract: An etching device includes a chamber; a stage disposed in the chamber and on which a target substrate is loaded; a gas distribution unit disposed to face the stage in the chamber; a plurality of plasma generation modules disposed above the chamber; a gas supply unit that supplies gas into the chamber; a gas line connecting the gas supply unit and the plurality of plasma generation modules; and a plurality of gas inlet pipes each including an end connected to the plasma generation module and another end connected to the gas distribution unit.
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公开(公告)号：US20220068979A1
公开(公告)日：2022-03-03
申请号：US17212812
申请日：2021-03-25
Applicant: Samsung Display Co., Ltd.
Inventor： Dae Soo KIM , Yu-Gwang JEONG , Sung Won CHO
IPC: H01L27/12 , H01L29/786 , H01L21/311 , H01L21/3065
Abstract: A method for etching an insulating layer includes: sequentially forming a first gate insulating layer, an amorphous silicon layer, a first interlayer insulating layer, and a second interlayer insulating layer on a substrate; applying a photoresist on the second interlayer insulating layer, and patterning the photoresist through a photo-process; first etching the second interlayer insulating layer and the first interlayer insulating layer until at least a portion of the amorphous silicon layer is exposed by using the patterned photoresist as a mask; second etching the second interlayer insulating layer and the first interlayer insulating layer; third etching the amorphous silicon layer; and fourth etching the first gate insulating layer, wherein an etching gas used in the second etching includes a material having a higher etching selection ratio of the first and second interlayer insulating layers to the amorphous silicon layer than an etching gas used in the first etching.
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