公开(公告)号：US20190305065A1

公开(公告)日：2019-10-03

申请号：US16369615

申请日：2019-03-29

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwook KIM ,  Chul kyu KANG ,  Wonkyu KWAK ,  Kwangmin KIM ,  Joongsoo MOON

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3266 ,  G09G3/3291

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.

公开(公告)号：US20240188329A1

公开(公告)日：2024-06-06

申请号：US18438009

申请日：2024-02-09

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwook KIM ,  Chul kyu KANG ,  Wonkyu KWAK ,  Kwangmin KIM ,  Joongsoo MOON

IPC: H10K59/121 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

CPC classification number: H10K59/1213 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H10K59/1216 ,  H10K59/131 ,  G09G2300/0426 ,  H01L29/78651 ,  H01L29/7869

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.

公开(公告)号：US20210273032A1

公开(公告)日：2021-09-02

申请号：US17322257

申请日：2021-05-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kiwook KIM ,  Chul kyu KANG ,  Wonkyu KWAK ,  Kwangmin KIM ,  Joongsoo MOON

IPC: H01L27/32 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12

Abstract: A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.