公开(公告)号：US11225721B2

公开(公告)日：2022-01-18

申请号：US16284629

申请日：2019-02-25

Applicant: SAMSUNG DISPLAY CO., LTD. ,  DONGWOO FINE-CHEM Co., Ltd.

Inventor： Jinhyung Kim ,  Joohwan Chung ,  Jinsook Kim ,  Haccheol Kim ,  Byungsu Lee ,  Changsoo Kim ,  Jungseek Jung ,  Dongki Kim ,  Sangtae Kim ,  Giyong Nam ,  Youngchul Park ,  Kyungbo Shim ,  Daesung Lim ,  Sanghoon Jang

IPC: C23F1/30 ,  H01L21/3213 ,  C09K13/04 ,  C09K13/00 ,  H01L21/465 ,  C09K13/06 ,  H01L21/302 ,  H01L21/306 ,  H01L29/786 ,  C23F1/16

Abstract: A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.

公开(公告)号：US20240324350A1

公开(公告)日：2024-09-26

申请号：US18544317

申请日：2023-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jonghyun Choi ,  Changsoo Kim

IPC: H10K59/131 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/1216 ,  H10K59/123 ,  H10K2102/103

Abstract: A display apparatus including: a substrate; a first semiconductor layer on the substrate; a first gate layer on the first semiconductor layer; a second gate layer on the first gate layer; a second semiconductor layer on the second gate layer; a third gate layer on the second semiconductor layer; a 1-1st transparent electrode layer on a same layer as the second gate layer; and a 1-2nd transparent electrode layer on a same layer as the third gate layer and overlapping at least a portion of the 1-1st transparent electrode layer in a plan view.