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公开(公告)号：US12051772B2
公开(公告)日：2024-07-30
申请号：US17447655
申请日：2021-09-14
Applicant: Samsung Display Co., Ltd.
Inventor： Seung Bo Shim , Chang Woo Kwon , Bong-Kyun Kim , Jin SueK Kim , Hyo Suk Park , Ho Kil Oh , Eung Gyu Lee , Wan-Soon Im , Joon Hoo Choi
CPC classification number: H01L33/62 , H01L2933/0066
Abstract: A display device includes: a first substrate; a plurality of metal layers on the first substrate and separated from each other; a buffer layer on the metal layer; a semiconductor layer on the buffer layer; a gate conductive layer on the semiconductor layer; a data conductive layer connected to the semiconductor layer; and a light-emitting element connected to the data conductive layer, wherein the metal layer includes a first portion partially overlapping the semiconductor layer in a third direction perpendicular to the surface of the first substrate, a second portion where the metal layer completely overlaps the semiconductor layer in the third direction, and a third portion where the metal layer does not overlap the semiconductor layer in the third direction.
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公开(公告)号：US20210183913A1
公开(公告)日：2021-06-17
申请号：US16933801
申请日：2020-07-20
Applicant: Samsung Display Co., Ltd.
Inventor： Hong Beom Lee , Chang Woo Kwon
IPC: H01L27/12 , H01L21/3213 , H01L21/321
Abstract: A method of fabricating a thin-film transistor (TFT) array substrate including forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming a semiconductor layer on the gate insulating layer, forming an ohmic contact layer on the semiconductor layer, and forming a source electrode and a drain electrode comprising a plurality of metal layer patterns on the ohmic contact layer, in which the semiconductor layer, the ohmic contact layer, the source electrode and the drain electrode are formed through a single mask process, and one of the plurality of metal layer patterns is etched through a polishing process to form the source electrode and the drain electrode.
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