公开(公告)号：US20160155784A1

公开(公告)日：2016-06-02

申请号：US14704002

申请日：2015-05-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seungwon PARK ,  Baek Hee LEE ,  Manseob CHOI ,  Minhyuck KANG ,  Moongyu LEE

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3246 ,  G03F7/0002 ,  G03F7/004 ,  H01L51/5209 ,  H01L51/5225 ,  H01L51/5268 ,  H01L2227/323

Abstract: A method for fabricating a display device includes forming a thin film transistor on a base substrate, forming a first electrode connected to the thin film transistor, forming a pixel defining layer overlapping a portion of the first electrode, such that the pixel defining layer exposes a portion of the first electrode and partitions pixel areas, forming a block copolymer layer on the first electrode and the pixel defining layer, patterning the block copolymer layer, etching the pixel defining layer by using the patterned block copolymer layer as a mask, such that an uneven pixel defining layer with a plurality of defining layer grooves is formed, and forming a light emitting layer on the first electrode and the uneven pixel defining layer.

Abstract translation: 一种制造显示装置的方法，包括在基底基板上形成薄膜晶体管，形成与薄膜晶体管连接的第一电极，形成与第一电极的一部分重叠的像素限定层，使得像素限定层暴露于 部分第一电极并分隔像素区域，在第一电极和像素限定层上形成嵌段共聚物层，图案化嵌段共聚物层，通过使用图案化的嵌段共聚物层作为掩模蚀刻像素限定层，使得 形成具有多个限定层槽的不均匀像素限定层，并且在第一电极和不平坦像素限定层上形成发光层。

公开(公告)号：US20240218249A1

公开(公告)日：2024-07-04

申请号：US18536646

申请日：2023-12-12

Applicant: Samsung Display Co., LTD.

Inventor： Seungwon PARK ,  Sungjae KIM ,  Youngsik KIM ,  Bitna YOON ,  Donghee LEE ,  Junehyuk JUNG

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  H10K50/115

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/565 ,  C09K11/623 ,  C09K11/70 ,  H10K50/115 ,  B82Y20/00

Abstract: A quantum dot includes a core and a first shell covering at least a portion of the core. The core includes indium (In), a first element, and phosphorus (P). The first shell includes a second element and a third element, the first element and the second element are each independently a Group III element, the third element is a Group VI element. The quantum dot satisfies Inequality 1 below:










(


M
1

+

M
2

+

M
3


)

/

M
In


>
7

,










wherein Inequality 1, MIn denotes the number of moles of In in the core and the first shell, M1 denotes the number of moles of the first element in the core and the first shell, M2 denotes the number of moles of the second element in the core and the first shell, and M3 denotes the number of moles of the third element in the core and the first shell.