公开(公告)号：US11756964B2

公开(公告)日：2023-09-12

申请号：US17212812

申请日：2021-03-25

Applicant: Samsung Display Co., Ltd.

Inventor： Dae Soo Kim ,  Yu-Gwang Jeong ,  Sung Won Cho

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L27/1251 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/78663

Abstract: A method for etching an insulating layer includes: sequentially forming a first gate insulating layer, an amorphous silicon layer, a first interlayer insulating layer, and a second interlayer insulating layer on a substrate; applying a photoresist on the second interlayer insulating layer, and patterning the photoresist through a photo-process; first etching the second interlayer insulating layer and the first interlayer insulating layer until at least a portion of the amorphous silicon layer is exposed by using the patterned photoresist as a mask; second etching the second interlayer insulating layer and the first interlayer insulating layer; third etching the amorphous silicon layer; and fourth etching the first gate insulating layer, wherein an etching gas used in the second etching includes a material having a higher etching selection ratio of the first and second interlayer insulating layers to the amorphous silicon layer than an etching gas used in the first etching.

公开(公告)号：US12161041B2

公开(公告)日：2024-12-03

申请号：US17308671

申请日：2021-05-05

Applicant: Samsung Display Co., LTD.

Inventor： Dae Soo Kim ,  Sang Gab Kim ,  Yun Jong Yeo ,  Ju Hee Lee ,  Soo Beom Jo ,  Dae Won Choi

IPC: H10K71/00 ,  H01J37/32 ,  H10K59/12 ,  H10K71/20

Abstract: An etching device includes a chamber; a stage disposed in the chamber and on which a target substrate is loaded; a gas distribution unit disposed to face the stage in the chamber; a plurality of plasma generation modules disposed above the chamber; a gas supply unit that supplies gas into the chamber; a gas line connecting the gas supply unit and the plurality of plasma generation modules; and a plurality of gas inlet pipes each including an end connected to the plasma generation module and another end connected to the gas distribution unit.