PIECEWISE LINEAR FUNCTION GENERATING ELECTRONIC CIRCUIT, CORRESPONDING GENERATOR, AMPLIFIER, METHOD AND COMPUTER PROGRAM PRODUCT

    公开(公告)号:US20220308615A1

    公开(公告)日:2022-09-29

    申请号:US17702362

    申请日:2022-03-23

    IPC分类号: G05F3/26 H03F3/45

    摘要: A cell includes a first pair and a second pair of MOS transistors. Each of the first pair and second pair of MOS transistors have drain electrodes coupled to a respective common input node. Each of the first pair and second pair of MOS transistors includes a diode-connected MOS transistor and a latched MOS transistor. The latched MOS transistors of the first pair and second pair of MOS transistors have cross-coupled gate and drain electrodes. Source electrodes of the diode connected MOS transistors from the first pair and second pair of MOS transistors are coupled to a first current output common node to output a current to a first current collecting circuit. Source source electrodes of the latched MOS transistors of the first pair and second pair of MOS transistors are coupled to a second current output common node to output a current to a second current collecting circuit.

    CIRCUIT ARRANGEMENT FOR THE GENERATION OF A BANDGAP REFERENCE VOLTAGE

    公开(公告)号:US20200264648A1

    公开(公告)日:2020-08-20

    申请号:US16867299

    申请日:2020-05-05

    IPC分类号: G05F3/26 G05F3/30

    摘要: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference formed by a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.