公开(公告)号：US20130153897A1

公开(公告)日：2013-06-20

申请号：US13714013

申请日：2012-12-13

Applicant: STMicroelectronics S.r.I.

Inventor： Giuseppe Scilla

IPC: H01L29/73

CPC classification number: H01L29/73 ,  G01R19/0092 ,  H01L27/0207 ,  H01L27/1022 ,  H01L29/0692 ,  H01L29/7302 ,  H03K17/08126 ,  H03K17/0826 ,  H03K17/12 ,  H03K17/14 ,  H03K2217/0027

Abstract: A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.

Abstract translation: 描述了具有至少一个第一，一个第二和一个第三端子的功率双极结构，并且包括具有耦合到至少一个驱动块的手指结构的至少一个功率双极晶体管。 功率双极晶体管包括连接到这些第一，第二和第三端子的至少一个元件双极单元，并且包括对应于功率双极晶体管的手指的至少一个功率元件双极结构，电耦合在第一和第二端子之间并耦合到 所述驱动块的驱动部分由至少一个感测部分能够检测关于所述功率元件双极结构的操作的信息，所述感测部分依次耦合到控制电路并将其作为所述功能元件双极结构的函数提供电流值 局部温度的功率元素双极结构。

公开(公告)号：US09099516B2

公开(公告)日：2015-08-04

申请号：US13714013

申请日：2012-12-13

Applicant: STMicroelectronics S.r.I.

Inventor： Giuseppe Scilla

IPC: H03K17/06 ,  H01L29/73 ,  H01L27/102 ,  H03K17/0812 ,  H03K17/082 ,  H03K17/12 ,  H03K17/14 ,  H01L27/02 ,  G01R19/00 ,  H01L29/06

CPC classification number: H01L29/73 ,  G01R19/0092 ,  H01L27/0207 ,  H01L27/1022 ,  H01L29/0692 ,  H01L29/7302 ,  H03K17/08126 ,  H03K17/0826 ,  H03K17/12 ,  H03K17/14 ,  H03K2217/0027

Abstract: A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.

Abstract translation: 描述了具有至少一个第一，一个第二和一个第三端子的功率双极结构，并且包括具有耦合到至少一个驱动块的手指结构的至少一个功率双极晶体管。 功率双极晶体管包括连接到这些第一，第二和第三端子的至少一个元件双极单元，并且包括对应于功率双极晶体管的手指的至少一个功率元件双极结构，电耦合在第一和第二端子之间并耦合到 所述驱动块的驱动部分由至少一个感测部分能够检测关于所述功率元件双极结构的操作的信息，所述感测部分依次耦合到控制电路并将其作为所述功能元件双极结构的函数提供电流值 局部温度的功率元素双极结构。