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    PHOTOSENSITIVE SENSOR AND CORRESPONDING OPTICAL SIGNAL ACQUISITION METHOD
    3.
    发明申请
    PHOTOSENSITIVE SENSOR AND CORRESPONDING OPTICAL SIGNAL ACQUISITION METHOD 有权

    公开(公告)号：US20230051181A1

    公开(公告)日：2023-02-16

    申请号：US17883764

    申请日：2022-08-09

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic LALANNE ,  Pierre MALINGE

    IPC: H04N5/343 ,  G01J1/44 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/33

    Abstract: A photosensitive sensor is capable of operating in a global shutter mode and in a rolling shutter mode. The sensor includes at least one pixel with a photosensitive region configured to photogenerate charges. A first transfer gate is configured to transfer photogenerated charges from the photosensitive region to a transfer node. A source-follower transistor is configured to transmit a reading signal to a read node, in the global shutter mode, in a manner controlled by a potential of the photogenerated charges on the transfer node. A second transfer gate is configured to transfer the photogenerated charges from the photosensitive region to the read node in the rolling shutter mode.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    4.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 有权

    公开(公告)号：US20210288102A1

    公开(公告)日：2021-09-16

    申请号：US17327364

    申请日：2021-05-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic LALANNE ,  Laurent GAY ,  Pascal FONTENEAU ,  Yann HENRION ,  Francois GUYADER

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME
    5.
    发明申请
    IMAGE SENSOR AND METHOD FOR CONTROLLING SAME 审中-公开

    公开(公告)号：US20200382738A1

    公开(公告)日：2020-12-03

    申请号：US16890877

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Pierre MALINGE ,  Frederic LALANNE ,  Laurent SIMONY

    IPC: H04N5/3745

    Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    7.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 审中-公开

    公开(公告)号：US20200227451A1

    公开(公告)日：2020-07-16

    申请号：US16740050

    申请日：2020-01-10

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

    BACK-SIDE ILLUMINATED IMAGE SENSOR
    8.
    发明申请
    BACK-SIDE ILLUMINATED IMAGE SENSOR 有权

    公开(公告)号：US20220336520A1

    公开(公告)日：2022-10-20

    申请号：US17855521

    申请日：2022-06-30

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent GAY ,  Frederic LALANNE ,  Yann HENRION ,  Francois GUYADER ,  Pascal FONTENEAU ,  Aurelien SEIGNARD

    IPC: H01L27/146

    Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

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