公开(公告)号：US10062639B2

公开(公告)日：2018-08-28

申请号：US14565686

申请日：2014-12-10

Applicant: STMICROELECTRONICS SDN BHD

Inventor： Cheeyang Ng

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49541 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48245 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2924/1711 ,  H01L2924/17738 ,  H01L2924/17747 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/207

Abstract: An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.

公开(公告)号：US10699990B2

公开(公告)日：2020-06-30

申请号：US16058045

申请日：2018-08-08

Applicant: STMICROELECTRONICS SDN BHD

Inventor： Cheeyang Ng

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

Abstract: An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.

公开(公告)号：US20180350728A1

公开(公告)日：2018-12-06

申请号：US16058045

申请日：2018-08-08

Applicant: STMICROELECTRONICS SDN BHD

Inventor： Cheeyang Ng

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

Abstract: An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.