公开(公告)号：US20220122910A1

公开(公告)日：2022-04-21

申请号：US17566437

申请日：2021-12-30

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： François TAILLIET ,  Guilhem BOUTON

IPC: H01L23/522 ,  H01L21/66 ,  H01L21/768 ,  H01L23/528 ,  H01L27/02 ,  H01L49/02

Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.

公开(公告)号：US20180323141A1

公开(公告)日：2018-11-08

申请号：US16033109

申请日：2018-07-11

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： François TAILLIET ,  Guilhem BOUTON

IPC: H01L23/522 ,  H01L21/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L23/5223 ,  H01L21/76895 ,  H01L22/22 ,  H01L22/32 ,  H01L23/528 ,  H01L27/0207 ,  H01L28/60

Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.