公开(公告)号：US20220005850A1

公开(公告)日：2022-01-06

申请号：US17363345

申请日：2021-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alain INARD ,  Marios BARLAS

IPC: H01L27/146 ,  H01L31/0232

Abstract: An optoelectronic device includes a photodiode. At least a portion of an active area of the photodiode is separated from a neighboring photodiode by a first wall including a conductive core and an insulating sheath and by a second optical insulation wall. The first wall and second optical insulation wall further extend parallel to each other and separate the active area from a memory area of the photodiode.

公开(公告)号：US20230408738A1

公开(公告)日：2023-12-21

申请号：US18361634

申请日：2023-07-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Vincent FARYS ,  Alain INARD ,  Olivier NOBLANC

IPC: G02B5/02 ,  C23C16/34 ,  C23C18/12 ,  C23C16/56

CPC classification number: G02B5/0263 ,  C23C16/345 ,  G02B5/0268 ,  C23C18/1208 ,  G02B5/0236 ,  C23C16/56

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

公开(公告)号：US20220011479A1

公开(公告)日：2022-01-13

申请号：US17482237

申请日：2021-09-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Vincent FARYS ,  Alain INARD ,  Olivier NOBLANC

IPC: G02B5/02 ,  C23C16/34 ,  C23C16/56 ,  C23C18/12

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

公开(公告)号：US20230352513A1

公开(公告)日：2023-11-02

申请号：US18303409

申请日：2023-04-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alain INARD ,  Emmanuel JOSSE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/1469 ,  H01L24/29

Abstract: The present description concerns a manufacturing method comprising the following steps: providing a silicon substrate having a via penetrating into the substrate from its front surface and comprising a silicon conductive core and a silicon oxide insulating sheath; etching the substrate from its rear surface, selectively over the sheath so that a portion of said at least one via protrudes from the rear surface; depositing a silicon oxide insulating layer on the rear surface; polishing the insulating layer to expose the core while leaving in place a portion of the thickness of the insulating layer; and forming a conductive electrode in contact with the core.

公开(公告)号：US20180143357A1

公开(公告)日：2018-05-24

申请号：US15610150

申请日：2017-05-31

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Vincent FARYS ,  Alain INARD ,  Olivier NOBLANC

IPC: G02B5/02 ,  C23C16/34 ,  C23C18/12 ,  C23C16/56

CPC classification number: G02B5/0263 ,  C23C16/345 ,  C23C16/56 ,  C23C18/1208 ,  G02B5/0236 ,  G02B5/0268

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.