公开(公告)号：US20160231468A1

公开(公告)日：2016-08-11

申请号：US15021764

申请日：2014-09-12

Applicant: SONY CORPORATION

Inventor： Yoichi OOTSUKA ,  Kenju NISHIKIDO ,  Ippei YOSHIBA

IPC: G02B3/00 ,  G03B13/36 ,  H01L27/146 ,  G02B1/113

CPC classification number: G02B3/0056 ,  G02B1/113 ,  G02B3/0018 ,  G02B3/0025 ,  G02B3/0031 ,  G02B7/34 ,  G03B13/36 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/3696

Abstract: The present technology relates to a lens array and a manufacturing method therefor, a solid-state imaging apparatus, and an electronic apparatus that can improve the AF performance while suppressing the deterioration of image quality. A lens array includes microlenses that are formed corresponding to phase difference detection pixels that are provided to be mixed in imaging pixels. Each of the microlenses is formed such that a lens surface thereof is a substantially spherical surface, the microlens has a rectangular shape in a planar view and four corners are not substantially rounded, and a bottom surface in vicinity of an opposite-side boundary portion that includes an opposite-side center portion of a pixel boundary portion in a cross-sectional view is higher than a bottom surface in vicinity of a diagonal boundary portion that includes a diagonal boundary portion. The present technology is applicable to a lens array of a CMOS image sensor, for example.

Abstract translation: 本技术涉及透镜阵列及其制造方法，固态成像装置和电子设备，其可以在抑制图像质量劣化的同时提高AF性能。 透镜阵列包括对应于被提供以混合在成像像素中的相位差检测像素形成的微透镜。 每个微透镜被形成为使得其透镜表面是基本上球形的表面，微透镜在平面图中具有矩形形状，并且四个角部基本上不是圆形，并且在相对侧边界部分附近的底表面 包括截面图中像素边界部分的相对侧中心部分高​​于包括对角边界部分的对角线边界部分附近的底面。 例如，本技术可应用于CMOS图像传感器的透镜阵列。

公开(公告)号：US20210183934A1

公开(公告)日：2021-06-17

申请号：US16316172

申请日：2017-06-30

Applicant: SONY CORPORATION

Inventor： Kenju NISHIKIDO ,  Takekazu SHINOHARA ,  Shinichiro NOUDO ,  Misato KONDO

IPC: H01L27/146

Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus, in which irregular reflection of light inside a solid-state imaging element package can be suppressed. In the solid-state imaging element, a plurality of pixels is planarly arranged, a connection portion utilized for connection to the outside is provided on a more outer side than an imaging region, and an open portion that is opened up to the connection portion from a light incident surface side of the imaging region where light is incident is formed. Additionally, a plurality of protruding portions periodically arranged is formed on a counterbore surface that is a surface inside the open portion excluding the connection portion. The present technology can be applied to, for example, a back-illuminated type or layered CMOS image sensor.

公开(公告)号：US20210043674A1

公开(公告)日：2021-02-11

申请号：US17076498

申请日：2020-10-21

Applicant: SONY CORPORATION

Inventor： Keishi INOUE ,  Kenju NISHIKIDO

IPC: H01L27/146 ,  H04N5/369 ,  H01L23/00

Abstract: The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.

公开(公告)号：US20200168653A1

公开(公告)日：2020-05-28

申请号：US16069134

申请日：2017-01-05

Applicant: SONY CORPORATION

Inventor： Keishi INOUE ,  Kenju NISHIKIDO

IPC: H01L27/146 ,  H04N5/369 ,  H01L23/00

Abstract: The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.