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1.发明申请公开(公告)号：US20210372003A1
公开(公告)日：2021-12-02
申请号：US17329460
申请日：2021-05-25
Applicant: SKC Co., Ltd
Inventor： Byung Kyu JANG , Jong Hwi PARK , Eun Su YANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A method of manufacturing a silicon carbide ingot, includes a preparing operation of adjusting internal space of a reactor in which silicon carbide raw materials and a seed crystal are disposed to have a high vacuum atmosphere, a proceeding operation of injecting an inert gas into the internal space, heating the internal space by moving a heater surrounding the reactor to induce the silicon carbide raw materials to sublimate, and growing the silicon carbide ingot on the seed crystal, and a cooling operation of cooling the temperature of the internal space to room temperature. The moving of the heater has a relative position which becomes more distant at a rate of 0.1 mm/hr to 0.48 mm/hr based on the seed crystal.
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2.发明申请公开(公告)号：US20210127462A1
公开(公告)日：2021-04-29
申请号：US17078570
申请日：2020-10-23
Applicant: SKC Co., Ltd.
Inventor： Eun Su YANG , Jong Hwi PARK , Jung Woo CHOI , Byung Kyu JANG , Sang Ki KO , Jongmin SHIM , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.
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3.发明申请公开(公告)号：US20210115592A1
公开(公告)日：2021-04-22
申请号：US16917387
申请日：2020-06-30
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Myung-Ok KYUN , Jongmin SHIM , Byung Kyu JANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D≤r≤37D [Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a length of a line of intersection between the first cross-sectional plane and the third cross-sectional plane.
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公开(公告)号：US20210372005A1
公开(公告)日：2021-12-02
申请号：US17088078
申请日：2020-11-03
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Jung-Gyu KIM , Eun Su YANG , Byung Kyu JANG , Jung Woo CHOI , Yeon Sik LEE , Sang Ki KO , Kap-Ryeol KU
IPC: C30B29/36 , C30B23/02 , C30B33/10 , H01L21/306 , H01L29/16
Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.
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公开(公告)号：US20210123843A1
公开(公告)日：2021-04-29
申请号：US16915621
申请日：2020-06-29
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Jongmin SHIM , Eun Su YANG , Yeon Sik LEE , Byung Kyu JANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).
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Patent Agency Ranking
公开(公告)号：US20210317595A1
公开(公告)日：2021-10-14
申请号：US17268189
申请日：2019-07-26
Applicant: SKC CO., LTD.
Inventor： Jung Woo CHOI , Jung-Gyu KIM , Kap-Ryeol KU , Sang Ki KO , Byung Kyu JANG
Abstract: A method of growing a semi-insulating SiC single crystal ingot, the method comprising the steps of: (1) placing a dopant coated with silicon carbide (SiC) and a carbon-based material into a reaction vessel containing a seed crystal fixed thereto; and (2) growing a SiC single crystal on the seed crystal, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration. In addition, another embodiment relates to a method of growing a semi-insulating silicon carbide single crystal ingot, the method comprising the steps of: (a) placing in a reaction vessel, a composition comprising a carbon-containing polymer resin, a solvent, a dopant, and silicon carbide (SiC); (b) solidifying the composition; and (c) growing a SiC single crystal ingot on a seed crystal fixed to the reaction vessel, thereby yielding a high-quality semi-insulating SiC single crystal ingot with a uniform thickness-based doping concentration.
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公开(公告)号：US20210317593A1
公开(公告)日：2021-10-14
申请号：US17088104
申请日：2020-11-03
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Eun Su YANG , Byung Kyu JANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.
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8.发明申请公开(公告)号：US20210123160A1
公开(公告)日：2021-04-29
申请号：US16917541
申请日：2020-06-30
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Myung-Ok KYUN , Jongmin SHIM , Byung Kyu JANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.
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公开(公告)号：US20210123157A1
公开(公告)日：2021-04-29
申请号：US16881491
申请日：2020-05-22
Applicant: SKC Co., Ltd.
Inventor： Jong Hwi PARK , Myung-Ok KYUN , Jongmin SHIM , Eun Su YANG , Byung Kyu JANG , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU , Jung-Gyu KIM
Abstract: A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.
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10.发明申请公开(公告)号：US20200299859A1
公开(公告)日：2020-09-24
申请号：US16665694
申请日：2019-10-28
Applicant: SKC Co., Ltd.
Inventor： Byung Kyu JANG , Jung-Gyu KIM , Jung Woo CHOI , Sang Ki KO , Kap-Ryeol KU
IPC: C30B23/06 , C30B29/36 , C01B32/956
Abstract: A method for producing an ingot includes loading a raw material comprising a raw material powder having a D50 of 80 μm or more into a reactor (loading step), controlling the internal temperature of the reactor such that adjacent particles of the raw material powder are interconnected to form a necked raw material (necking step), and sublimating components of the raw material from the necked raw material to grow an ingot (ingot growth step).
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