公开(公告)号：US08817561B2

公开(公告)日：2014-08-26

申请号：US13767598

申请日：2013-02-14

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Seok Hwan Choi ,  Joong Seob Yang ,  Seung Ho Chang ,  Sang Sik Kim ,  Sang Chul Lee ,  Ho Yeon Lee ,  Jaekyun Moon ,  Jaehyeong No

IPC: G11C29/04

CPC classification number: G11C29/04 ,  G11C11/16 ,  G11C11/22 ,  G11C13/00 ,  G11C16/00 ,  G11C29/50004 ,  G11C2029/5002

Abstract: A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.

Abstract translation: 一种用于估计包括多个存储单元的非易失性存储器件的通道特性的方法，包括以下步骤：基于输入数据和存储单元的物理结构，计算根据输入数据编程的存储器单元的第一阈值电压分布 ; 基于输出数据和存储器单元的物理结构计算存储器单元的第二阈值电压分布; 以及使用掩模分析第一和第二阈值电压分布之间的关系。