公开(公告)号：US12045131B2

公开(公告)日：2024-07-23

申请号：US18065564

申请日：2022-12-13

Applicant: SK hynix Inc.

Inventor： Dmitri Zeleniak ,  Pavel Chertkov ,  Valery Abramov ,  Sergei Peniaz ,  Sergei Musin

IPC: G06F11/10 ,  G06F11/27 ,  G06F11/30

CPC classification number: G06F11/1048 ,  G06F11/27 ,  G06F11/3037

Abstract: Techniques for injecting memory read errors may include obtaining an error injection profile from a test library. A defense level in the defense hierarchy can be selected for execution according to the probabilities in the error injection profile. One or more errors can be injected into read operations of the storage device according to the defense-level read retry vector of the selected defense level, and a defense algorithm of the selected defense level is executed to recover read data of the read operations.

公开(公告)号：US20240193039A1

公开(公告)日：2024-06-13

申请号：US18065564

申请日：2022-12-13

Applicant: SK hynix Inc.

Inventor： Dmitri Zeleniak ,  Pavel Chertkov ,  Valery Abramov ,  Sergei Peniaz ,  Sergei Musin

IPC: G06F11/10 ,  G06F11/27 ,  G06F11/30

CPC classification number: G06F11/1048 ,  G06F11/27 ,  G06F11/3037

Abstract: Techniques for injecting memory read errors may include obtaining an error injection profile from a test library. A defense level in the defense hierarchy can be selected for execution according to the probabilities in the error injection profile. One or more errors can be injected into read operations of the storage device according to the defense-level read retry vector of the selected defense level, and a defense algorithm of the selected defense level is executed to recover read data of the read operations.