公开(公告)号：US20230332016A1

公开(公告)日：2023-10-19

申请号：US18297152

申请日：2023-04-07

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Seung Chul HONG ,  Han Teo PARK ,  Hwan Chul KIM ,  Hyeong Ju LEE

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/30625

Abstract: A composition for semiconductor processing, includes abrasive particles surface-modified with an amino silane-based compound; a copper erosion inhibitor, including an azole-based compound; a copper surface protectant, including a compound having a betaine group and a salicylic group or a derivative thereof; and a surfactant, including fluorine in a molecule thereof. A surface of the surface-modified abrasive particles comprises an amino silane group.

公开(公告)号：US20240274439A1

公开(公告)日：2024-08-15

申请号：US18404979

申请日：2024-01-05

Applicant: SK enpulse Co., Ltd.

Inventor： Deok Su HAN ,  Hwan Chul KIM ,  Seung Chul HONG ,  Han Teo PARK

IPC: H01L21/3105 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below;







Ds
=


MPS
2

-

D

1
⁢

0
2








[

Equation
⁢

1

]









In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.

公开(公告)号：US20230227696A1

公开(公告)日：2023-07-20

申请号：US18099031

申请日：2023-01-19

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul HONG ,  Deok Su HAN ,  Han Teo PARK ,  Hwan Chul KIM ,  Kyu Hun KIM ,  Eun Sun JOENG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/1436 ,  H01L21/3212 ,  H01L21/7684 ,  H01L23/53266

Abstract: The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.