公开(公告)号：US11854790B2

公开(公告)日：2023-12-26

申请号：US18063808

申请日：2022-12-09

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian ,  Zhen Gu ,  Hua Shao ,  Haoyu Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1464

摘要： The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

公开(公告)号：US20210305265A1

公开(公告)日：2021-09-30

申请号：US17213885

申请日：2021-03-26

申请人： SHANGHAI HUALI MICROELECTRONICS CORPORATION

发明人： Zhi Tian ,  Juanjuan LI ,  Hua SHAO ,  Haoyu CHEN

IPC分类号： H01L27/11536 ,  H01L49/02 ,  H01L27/06 ,  H01L29/66 ,  H01L29/788 ,  H01L27/11539

摘要： The present disclosure provides a stack capacitor, a flash memory device, and a manufacturing method thereof. The stack capacitor of the flash memory device has a a memory transistor structure which at least comprises a substrate, and a tunneling oxide layer, a floating gate layer, an interlayer dielectric layer and a control gate layer which are sequentially stacked on the substrate, the interlayer dielectric layer of the stack capacitor comprises a first oxide layer and a nitride layer; the stack capacitor further comprises a first contact leading out of the control gate layer and a second contact leading out of the floating gate layer. The capacitance per unit area of the stack capacitor provided by the disclosure is effectively improved, and the size of the transistor device is reduced. The manufacturing method according to the disclosure does not add any additional photomask than a conventional process flow.

公开(公告)号：US11735610B2

公开(公告)日：2023-08-22

申请号：US16951606

申请日：2020-11-18

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian ,  Zhen Gu ,  Hua Shao ,  Haoyu Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14616 ,  H01L27/1463 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1464

摘要： The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

公开(公告)号：US11676987B2

公开(公告)日：2023-06-13

申请号：US17723305

申请日：2022-04-18

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhen Gu ,  Zhi Tian ,  Qiwei Wang ,  Haoyu Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14643 ,  H01L27/14689

摘要： The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.

公开(公告)号：US10804302B2

公开(公告)日：2020-10-13

申请号：US16203628

申请日：2018-11-29

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian

IPC分类号： H01L27/146

摘要： The present disclosure provides a pixel structure for a CMOS image sensor and a manufacturing method therefor, the pixel structure comprising a photo diode and a source follow transistor, and an isolation strip is provided between the photo diode and the source follow transistor, and a contact hole is provided in a drain terminal of the source follow transistor, with the width of a part, corresponding to the contact hole portion, of a drain terminal active area of the source follow transistor being smaller than the width of the rest of the drain terminal active area, so that the width of a part, corresponding to the contact hole portion, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area, of the isolation strip.

公开(公告)号：US20240147715A1

公开(公告)日：2024-05-02

申请号：US18139530

申请日：2023-04-26

申请人： Shanghai Huali Microelectronics Corporation

发明人： Jiacheng Wen ,  Zhi Tian ,  Feng Ji

IPC分类号： H10B41/30 ,  H01L29/423

CPC分类号： H10B41/30 ,  H01L29/42328

摘要： The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer. The erase gate is located at the top of the second polysilicon layer, and the erase gate and the floating gate are spaced from each other by a second inter-gate dielectric layer therebetween. During erasing, the top angle of the second polysilicon layer generates point discharge, thereby reducing an erasing voltage. The present application also discloses a method for manufacturing a super flash.

公开(公告)号：US20230136097A1

公开(公告)日：2023-05-04

申请号：US17953472

申请日：2022-09-27

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian ,  Haoyu Chen ,  Hua Shao

IPC分类号： H01L27/24 ,  H01L45/00

摘要： The present application discloses a ReRAM device, the bottom surface of a first resistance switching layer is connected with a bottom electrode, and a first groove is formed in the center of the top surface of the first resistance switching layer. A second resistance switching layer is formed on the first resistance switching layer, the center of the bottom surface of the second resistance switching layer is filled downwards into the first groove, and the top surface of the second resistance switching layer is connected with a top electrode. The material of the second resistance switching layer is more conductive than the material of the first resistance switching layer. The present application can maintain the stability of the central conductive filament in the low resistance state. The present application further discloses a method for manufacturing the ReRAM device.

公开(公告)号：US20220060650A1

公开(公告)日：2022-02-24

申请号：US16951606

申请日：2020-11-18

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian ,  Zhen Gu ,  Hua Shao ,  Haoyu Chen

IPC分类号： H04N5/3745 ,  H04N5/353 ,  H01L27/146

摘要： The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

公开(公告)号：US20220059598A1

公开(公告)日：2022-02-24

申请号：US16951038

申请日：2020-11-18

申请人： Shanghai Huali Microelectronics Corporation

发明人： Zhi Tian ,  Juanjuan Li ,  Hua Shao ,  Haoyu Chen

IPC分类号： H01L27/146 ,  H01L27/148

摘要： The disclosure discloses a method for detecting the depth of a vertical gate of a transfer transistor of a CMOS image sensor. The effective electrical thickness of planar gate polysilicon of a transfer transistor of a reference CMOS image sensor is obtained through a planar test, the capacitance of a vertical gate structure of a transfer transistor of a to-be-tested CMOS image sensor is obtained through a vertical test, and then the equivalent depth of the vertical gate of the transfer transistor of the to-be-tested CMOS image sensor is calculated accordingly. The depth of the gates of the transfer transistors of all CMOS image sensors can be monitored on line without damaging a silicon wafer, it is conducive to finding the abnormality of the depth of the gates of the transfer transistors in time, and the product quality of the CMOS image sensor can be effectively monitored.

公开(公告)号：US09123619B2

公开(公告)日：2015-09-01

申请号：US14098017

申请日：2013-12-05

申请人： SHANGHAI HUALI MICROELECTRONICS CORPORATION

发明人： Zhi Tian ,  QiuMin Jin

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： The present invention discloses a method for inhibiting the electric crosstalk of back illuminated CMOS image sensor. This invention comprises, two ion implanting layers are implanted at the different area of the backside of the pixel unit after the thickness of the backside of CMOS image sensor is reduced. The ion concentrations implanted into the two layers are controlled to decrease progressively from top to bottom. An electric field is formed from top to bottom inside the epitaxial layer. The said electric field absorbs the incident light which arrives at the substrate region outside of the space charge of the photodiode. It reduces the electron diffuses in different pixels. Consequently, it reduces the electric crosstalk of pixels, improves the manufacture process and improve the image quality of the of CMOS image sensor.

摘要翻译： 本发明公开了一种抑制背照式CMOS图像传感器的电串扰的方法。 本发明包括：在CMOS图像传感器的背面的厚度减小之后，将两个离子注入层注入到像素单元的背面的不同区域。 控制注入两层的离子浓度从上到下逐渐降低。 在外延层内部从上到下形成电场。 所述电场吸收到达光电二极管的空间电荷之外的衬底区域的入射光。 它可以减少不同像素的电子扩散。 因此，它减少了像素的电串扰，改善了CMOS图像传感器的制造工艺和图像质量。