公开(公告)号：US20240388059A1

公开(公告)日：2024-11-21

申请号：US18662489

申请日：2024-05-13

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Heonsu JEON ,  Myeongeun KIM

IPC: H01S5/11 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32

Abstract: Provided is a photonic crystal laser device including a lower electrode layer on a top surface or bottom surface of a substrate, a guide layer on the lower electrode layer, an upper electrode layer on the guide layer, a lower clad layer between the lower electrode layer and the guide layer, and an upper clad layer between the guide layer and the upper electrode layer. The guide layer includes an active layer therein. A crystal hole is provided that penetrates the upper clad layer in a vertical direction and extends toward the guide layer. A lower end of the crystal hole is defined to be at a height higher than or at the same height as a top surface of the active layer.