公开(公告)号：US20240049560A1

公开(公告)日：2024-02-08

申请号：US18258922

申请日：2021-12-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daiki NAKAMURA ,  Rai SATO ,  Ryu KOKUBO ,  Hiroki ADACHI

IPC: H10K59/80 ,  H10K71/60 ,  H10K50/16 ,  H10K50/15 ,  H10K59/38

CPC classification number: H10K59/8051 ,  H10K71/60 ,  H10K59/8052 ,  H10K50/16 ,  H10K50/15 ,  H10K59/38

Abstract: A method for manufacturing a display apparatus having high display quality is provided. A method for manufacturing a display apparatus including first to third insulators, first and second conductors, and first and second EL layers is provided. The first conductor is formed over the first insulator, and the second insulator is formed over the first insulator and over the first conductor. A first opening portion reaching the first conductor is formed in the second insulator. A sacrificial layer is formed over the second insulator and over a bottom surface of the first opening portion, and a resist is applied over the sacrificial layer. Light exposure and development are performed on the resist, so that a second opening portion reaching the sacrificial layer is formed in a region overlapping with the first conductor. A third opening portion is formed in a region of a bottom surface of the second opening portion, and the first EL layer is formed over the resist, over the sacrificial layer, and over the first conductor. Then, the resist and the sacrificial layer are removed, whereby the first EL layer over the resist and over the sacrificial layer is removed. The second EL layer is formed over the first EL layer and over the second insulator, and the second conductor and the third insulator are formed in order over the second EL layer.