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公开(公告)号：US20200052299A1
公开(公告)日：2020-02-13
申请号：US16599944
申请日：2019-10-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/36 , H01M10/0566 , H01M6/16 , H01M4/62 , H01M4/139 , H01G9/042 , H01G11/32 , H01M4/133 , H01G11/22 , C01B32/192 , C01B32/23 , B82Y40/00 , B82Y30/00 , H01M4/1393 , H01M4/587 , H01M4/04
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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2.发明申请公开(公告)号：US20160079600A1
公开(公告)日：2016-03-17
申请号：US14948965
申请日：2015-11-23
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takuya MIWA , Kuniharu NOMOTO , Junpei MOMO
CPC classification number: H01M4/5825 , C01D15/02 , C01G45/006 , C01G49/009 , C01G51/006 , C01G53/006 , C30B7/10 , C30B29/14 , H01M4/364 , H01M4/587 , H01M2004/028 , H01M2220/30
Abstract: An object is to reduce variation in shape of crystals that are to be formed. Solutions containing respective raw materials are made in an environment where an oxygen concentration is lower than that in air, the solutions containing the respective raw materials are mixed in an environment where an oxygen concentration is lower than that in air to form a mixture solution, and with use of the mixture solution, a composite oxide is formed by a hydrothermal method.
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公开(公告)号：US20230073850A1
公开(公告)日：2023-03-09
申请号：US17983140
申请日：2022-11-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/04 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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公开(公告)号：US20200350585A1
公开(公告)日：2020-11-05
申请号：US16935771
申请日：2020-07-22
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/04 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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公开(公告)号：US20170288256A1
公开(公告)日：2017-10-05
申请号：US15622995
申请日：2017-06-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takuya MIWA , Kuniharu NOMOTO , Nobuhiro INOUE
CPC classification number: H01G9/042 , B82Y30/00 , H01M4/5825 , H01M4/622 , H01M4/625 , H01M10/04 , Y10T29/417 , Y10T29/49115
Abstract: At least one of an aqueous solution A containing lithium, an aqueous solution B containing iron, manganese, cobalt, or nickel, and an aqueous solution C containing a phosphoric acid includes graphene oxide. The aqueous solution A is dripped into the aqueous solution C, so that a mixed solution E including a precipitate D is prepared. The mixed solution E is dripped into the aqueous solution B, so that a mixed solution G including a precipitate F is prepared. The mixed solution G is subjected to heat treatment in a pressurized atmosphere, so that a mixed solution H is prepared, and the mixed solution H is then filtered. Thus, particles of a compound containing lithium and oxygen which have a small size are obtained.
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Patent Agency Ranking
6.发明申请METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL FOR ENERGY STORAGE DEVICE AND ENERGY STORAGE DEVICE 审中-公开用于制造能量储存装置和能量储存装置的正极活性物质的方法公开(公告)号：US20170054141A1
公开(公告)日：2017-02-23
申请号：US15342860
申请日：2016-11-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Kuniharu NOMOTO , Takuya MIWA , Masaki YAMAKAJI , Takahiro KAWAKAMI
CPC classification number: H01M4/1397 , H01M4/0433 , H01M4/0471 , H01M4/136 , H01M4/366 , H01M4/38 , H01M4/5825 , H01M4/625 , H01M2004/028 , Y02E60/122 , Y02P70/54
Abstract: An energy storage device having high capacity per weight or volume and a positive electrode active material for the energy storage device are manufactured. A surface of a main material included in the positive electrode active material for the energy storage device is coated with two-dimensional carbon. The main material included in the positive electrode active material is coated with a highly conductive material which has a structure expanding two-dimensionally and whose thickness is ignorable, whereby the amount of carbon coating can be reduced and an energy storage device having capacity close to theoretical capacity can be obtained even when a conduction auxiliary agent is not used or the amount of the conduction auxiliary agent is extremely small. Accordingly, the amount of carbon coating in a positive electrode and the volume of the conduction auxiliary agent can be reduced; consequently, the volume of the positive electrode can be reduced.
Abstract translation: 制造具有高容量/重量或体积的储能装置和用于储能装置的正极活性物质。 包含在能量储存装置的正极活性物质中的主要材料的表面涂覆有二维碳。 包含在正极活性物质中的主要材料涂覆有具有二维膨胀并且其厚度可忽略的结构的高导电性材料，由此可以减少碳涂层的量，并且具有接近理论值的能量存储装置 即使不使用导电助剂或导电助剂的量极少，也可以获得容量。 因此，可以减少正极中的碳涂覆量和导电助剂的体积; 因此，可以减小正极的体积。
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公开(公告)号：US20230307639A1
公开(公告)日：2023-09-28
申请号：US18205264
申请日：2023-06-02
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/04 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36
CPC classification number: H01M4/5835 , H01G11/22 , H01M4/133 , H01G11/32 , H01M4/0438 , H01M4/587 , H01M4/1393 , B82Y30/00 , B82Y40/00 , C01B32/23 , C01B32/192 , H01G9/042 , H01M4/139 , H01M4/62 , H01M6/16 , H01M10/0566 , H01G11/36 , Y02E60/13 , H01M10/0525
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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公开(公告)号：US20180287160A1
公开(公告)日：2018-10-04
申请号：US16001467
申请日：2018-06-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Masaki YAMAKAJI , Kuniharu NOMOTO
Abstract: The positive electrode active material layer includes a plurality of particles of a positive electrode active material and a reaction mixture where reduced graphene oxide is bonded to a polymer having a functional group as a side chain. The reduced graphene oxide has a sheet-like shape and high conductivity and thus functions as a conductive additive by being in contact with the plurality of particles of the positive electrode active material. The reaction mixture serves as an excellent binder since the reduced graphene oxide is bonded to the polymer. Therefore, even a small amount of the reaction mixture where the reduced graphene oxide is eovalently bonded to the polymer excellently serves as a conductive additive and a binder.
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公开(公告)号：US20240266538A1
公开(公告)日：2024-08-08
申请号：US18635132
申请日：2024-04-15
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroatsu TODORIKI , Yumiko SAITO , Takahiro KAWAKAMI , Kuniharu NOMOTO , Mikio YUKAWA
IPC: H01M4/583 , B82Y30/00 , B82Y40/00 , C01B32/192 , C01B32/23 , H01G9/042 , H01G11/22 , H01G11/32 , H01G11/36 , H01M4/04 , H01M4/133 , H01M4/139 , H01M4/1393 , H01M4/587 , H01M4/62 , H01M6/16 , H01M10/0525 , H01M10/0566
CPC classification number: H01M4/5835 , B82Y30/00 , B82Y40/00 , C01B32/192 , C01B32/23 , H01G9/042 , H01G11/22 , H01G11/32 , H01G11/36 , H01M4/0438 , H01M4/133 , H01M4/139 , H01M4/1393 , H01M4/587 , H01M4/62 , H01M6/16 , H01M10/0566 , H01M10/0525 , Y02E60/13
Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
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公开(公告)号：US20220223866A1
公开(公告)日：2022-07-14
申请号：US17706646
申请日：2022-03-29
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI , Kuniharu NOMOTO
IPC: H01M4/587 , B82Y40/00 , C25D5/48 , C25D5/50 , C25D13/02 , C25D13/12 , H01M4/04 , H01M4/133 , H01M4/1393 , H01M4/66 , H01M4/70 , B82Y30/00
Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.
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