公开(公告)号：US10236248B2

公开(公告)日：2019-03-19

申请号：US15603984

申请日：2017-05-24

申请人： SEIKO EPSON CORPORATION

发明人： Takahiko Yoshizawa ,  Kunio Watanabe ,  Tatsuki Shirasawa ,  Takashi Sakuda

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L23/485

摘要： The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad.

公开(公告)号：US10157932B2

公开(公告)日：2018-12-18

申请号：US15668139

申请日：2017-08-03

申请人： SEIKO EPSON CORPORATION

发明人： Kunio Watanabe ,  Masaki Okuyama

IPC分类号： H01L27/11568 ,  H01L29/792 ,  H01L21/266 ,  H01L29/66 ,  H01L21/311 ,  H01L29/51 ,  H01L21/28 ,  H01L27/11573 ,  H01L21/02 ,  H01L21/265

摘要： A semiconductor device includes: a memory transistor including a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a first gate electrode that are disposed in sequence on a substrate; and a MOS transistor including a third silicon oxide film and a second gate electrode that are disposed in sequence on the substrate. The memory transistor has a side wall including an extending portion of the first silicon oxide film, a second silicon nitride film that is in contact with the first silicon nitride film, and a fourth silicon oxide film that are disposed in sequence on the substrate, and the MOS transistor has a side wall including a fifth silicon oxide film that is disposed on the substrate.