公开(公告)号：US20230170375A1

公开(公告)日：2023-06-01

申请号：US18155419

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM ,  Taesub JUNG ,  Yonghun KWON ,  Moosup LIM

IPC: H01L27/146 ,  G01S7/4865 ,  G01B11/22 ,  G01S17/894

CPC classification number: H01L27/14641 ,  G01S7/4865 ,  H01L27/14612 ,  G01B11/22 ,  G01S17/894 ,  H01L27/1463

Abstract: A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

公开(公告)号：US20220377264A1

公开(公告)日：2022-11-24

申请号：US17726207

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Younggu JIN ,  Youngchan KIM ,  Sung-ho CHOI

IPC: H04N5/353 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/374 ,  H04N5/355

Abstract: Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

公开(公告)号：US20240186359A1

公开(公告)日：2024-06-06

申请号：US18244342

申请日：2023-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwook LIM ,  Younggu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685

Abstract: An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes a first photodiode, a second photodiode, a first transmission gate, a second transmission gate, and a plurality of active regions; and a logic circuit configured to control the pixels. The plurality of active regions include a first active region, a second active region and a third active region. The first active region is disposed adjacent to the first transmission gate. The second active region is disposed adjacent to the second transmission gate. The third active region is electrically connected to the second active region. The first active region and the second active region are disposed on a main substrate including the first and second photodiodes. The third active region is disposed on a sub-substrate attached to the main substrate.

公开(公告)号：US20210134867A1

公开(公告)日：2021-05-06

申请号：US16870350

申请日：2020-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN ,  Taesub JUNG ,  Youngchan KIM

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a photoelectric conversion region provided in the substrate, and a polarizer provided at the first surface of the substrate. The polarizer includes a lower structure comprising at least one trench recessed from the first surface of the substrate toward the photoelectric conversion region, and a plurality of upper patterns provided on the lower structure and spaced apart from each other in a first direction parallel to the first surface.

公开(公告)号：US20250015108A1

公开(公告)日：2025-01-09

申请号：US18625295

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM ,  Seunghyun LEE ,  Taeun HWANG

IPC: H01L27/146

Abstract: An image sensor that includes a substrate including a first photodiode (PD) region and a second PD region adjacent to the first PD region; a first PD having a first area in the first PD region; a second PD in the second PD region, the second PD having a second area smaller than the first area; a micro-lens on the substrate and covering the first PD region; and a light splitter between the substrate and the micro-lens, the light splitter including a material having a refractive index different from a refractive index of the micro-lens. The light splitter extends from the first PD region to the second PD region.

公开(公告)号：US20220337766A1

公开(公告)日：2022-10-20

申请号：US17540491

申请日：2021-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN

IPC: H04N5/353 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/376

Abstract: Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.

公开(公告)号：US20230317742A1

公开(公告)日：2023-10-05

申请号：US18103670

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

Abstract: An image sensor includes a semiconductor substrate including a pixel region; a vertical gate electrode disposed in the semiconductor substrate at a center of the pixel region; a charge pocket region provided under the vertical gate electrode in the semiconductor substrate, and doped with a first impurity having a first conductivity type; a first impurity region which is spaced apart from the charge pocket region in a vertical direction, doped with a second impurity having a second conductivity type, and surrounded by the vertical gate electrode; and a second impurity region which is provided around the vertical gate electrode and doped with the second impurity

公开(公告)号：US20220417460A1

公开(公告)日：2022-12-29

申请号：US17843123

申请日：2022-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM

IPC: H04N5/369 ,  H04N5/378 ,  H04N5/357

Abstract: An image sensor for distance measurement and an image sensor module including the image sensor are provided. The image sensor includes: a pixel array including a plurality of pixels including a plurality of first pixels arranged on a first line and a plurality of second pixels arranged on a second line, wherein the plurality of first pixels and the plurality of second pixels are arranged to be staggered from each other, and each of the plurality of first pixels and the plurality of second pixels includes a plurality of modulation gates for receiving a plurality of modulated signals during a photocharge collection period; a row decoder that provides control signals and the plurality of modulated signals to the pixel array; and an analog-to-digital conversion circuit that receives a plurality of sensing signals from the pixel array and converts the plurality of sensing signals into a plurality of digital signals.

公开(公告)号：US20220165775A1

公开(公告)日：2022-05-26

申请号：US17375148

申请日：2021-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/369

Abstract: A depth pixel includes a first photodiode, a second photodiode and a common microlens. First and second taps are disposed at both sides of the first photodiode in a first horizontal direction to sample a photo charge stored in the first photodiode. The second photodiode is disposed at a side of the first photodiode in a second horizontal direction perpendicular to the first horizontal direction. Third and fourth taps are disposed at both sides of the second photodiode in the first horizontal direction to sample a photo charge stored in the second photodiode. The common microlens is disposed above or below the semiconductor substrate. The common microlens covers both of the first photodiode and the second photodiode to focus an incident light to the first photodiode and the second photodiode.

公开(公告)号：US20210144325A1

公开(公告)日：2021-05-13

申请号：US16876567

申请日：2020-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM ,  Moosup LIM

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/372

Abstract: According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.