公开(公告)号：US20240145345A1

公开(公告)日：2024-05-02

申请号：US18209206

申请日：2023-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonggil KIM ,  Hoon Seok SEO ,  Yungbae KIM ,  Wookyung YOU

IPC: H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes active patterns on a substrate, source/drain patterns, first and second separation structures, wherein adjacent source/drain patterns are interposed between the first and second separation structures, an interlayer insulating layer on the source/drain patterns and first and second separation structures, a through-via between the adjacent source/drain patterns, penetrating the interlayer insulating layer, and extending toward the substrate, wherein a top of the through-via is coplanar with a top of the interlayer insulating layer, a dielectric layer selectively on the top of the interlayer insulating layer, and opening the top of the through-via, a power via guided to connect to the top of the through-via by the dielectric layer, a power line on the power via and electrically connected to the through-via through the power via, a power delivery network layer on a bottom of the substrate, and a lower conductor under the through-via.