Semiconductor package
    1.
    发明授权

    公开(公告)号:US11862571B2

    公开(公告)日:2024-01-02

    申请号:US17693545

    申请日:2022-03-14

    CPC classification number: H01L23/552 H01L23/498 H01L25/00

    Abstract: A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.

    Semiconductor package and method of fabricating the same

    公开(公告)号:US11508681B2

    公开(公告)日:2022-11-22

    申请号:US16988136

    申请日:2020-08-07

    Abstract: A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

    Semiconductor package
    4.
    发明授权

    公开(公告)号:US11296037B2

    公开(公告)日:2022-04-05

    申请号:US16668289

    申请日:2019-10-30

    Abstract: A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.

    SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210043592A1

    公开(公告)日:2021-02-11

    申请号:US16988136

    申请日:2020-08-07

    Abstract: A semiconductor package includes a semiconductor substrate, a conductive pad on the semiconductor substrate, a redistribution line conductor, a coating insulator, and an aluminum oxide layer. The redistribution line conductor is electrically connected to the conductive pad. The coating insulator covers the redistribution line conductor and partially exposes the redistribution line conductor. The aluminum oxide layer is provided below the coating insulator and extends along a top surface of the redistribution line conductor, and the aluminum oxide layer is in contact with the redistribution line conductor.

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