公开(公告)号：US20230194979A1

公开(公告)日：2023-06-22

申请号：US17938138

申请日：2022-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mijin KWON ,  Seunghune YANG ,  Youngyeop LEE

IPC: G03F1/70 ,  G03F1/36 ,  G06F30/398

CPC classification number: G03F1/70 ,  G03F1/36 ,  G06F30/398

Abstract: A method of correcting an error of a layout of a pattern includes: designing a layout of a target pattern; checking an error between the layout of the target pattern and a layout of a real pattern in a photomask manufactured based on the layout of the target pattern; generating EPE vectors at a plurality of points, respectively, in a contour of the layout of the target pattern;
calculating horizontal and vertical elements in horizontal and vertical directions, respectively, of each of the generated EPE vectors; calculating an offset representative value of the layout of the target pattern at each direction based on the calculated horizontal and vertical elements of the EPE vectors; and correcting the layout of the target pattern based on the offset representative value.