公开(公告)号：US20130343696A1

公开(公告)日：2013-12-26

申请号：US13826471

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Gu KIM ,  Dong-Jae SHIN ,  Yong-Hwack SHIN ,  Young CHOI ,  Kyoung-Ho HA

IPC: G02B6/12

CPC classification number: G02B6/12 ,  G02B6/12004 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/066 ,  G02F2202/105

Abstract: An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.

Abstract translation: 光学集成电路可以包括包括单晶半导体材料的衬底，在衬底的<100>晶体取向中延伸并包括单晶半导体材料的无源元件和以<110>晶体取向延伸的有源元件 并且包括单晶半导体材料。

公开(公告)号：US20140254295A1

公开(公告)日：2014-09-11

申请号：US14198028

申请日：2014-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong SHIM ,  In-Dal SONG ,  Young CHOI

IPC: G11C11/4063

CPC classification number: G11C7/1072 ,  G11C7/1006 ,  G11C7/1051 ,  G11C7/1078 ,  G11C7/109 ,  G11C7/1093 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4093

Abstract: A memory device is provided. The memory device includes programming first bit data into a plurality of memory cells; identifying target memory cells which are in a first state and whose threshold voltages are equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating a plurality of third bit data by performing a first process on the second bit data; selecting third bit data which changes a largest number of target memory cells from the first state to a second state in response to the memory cells being programmed with each of the plurality of third bit data from the plurality of third bit data; and programming the selected third bit data into the memory cells.

Abstract translation: 提供存储器件。 存储器件包括将第一位数据编程到多个存储器单元中; 识别处于第一状态并且其阈值电压等于或大于来自用第一位数据编程的存储器单元的第一电压的目标存储器单元; 接收要编程到存储器单元中的第二位数据; 通过对所述第二位数据执行第一处理来计算多个第三位数据; 响应于来自多个第三位数据的多个第三位数据中的每一个对存储器单元进行编程，选择将最大数目的目标存储器单元从第一状态改变到第二状态的第三位数据; 并将所选择的第三位数据编程到存储器单元中。