公开(公告)号：US20230402377A1

公开(公告)日：2023-12-14

申请号：US18120845

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulki HONG ,  Youghan KIM ,  Jaeyeop LEE

IPC: H01L23/528 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/5283 ,  H01L29/7851 ,  H01L29/6656

Abstract: A semiconductor device includes a first gate structure, a first source/drain layer and a first contact plug. The first gate structure is formed on a substrate, and extends in a second direction parallel to an upper surface of the substrate. The first source/drain layer is formed at a side of the first gate structure in a first direction substantially parallel to the upper surface of the substrate and crossing the second direction. A central portion in the first direction of an upper surface of the first source/drain layer is lower than an edge portion in the first direction of the upper surface of the first source/drain layer. The first contact plug is formed on the first source/drain layer, and contacts the edge portion of the upper surface of the first source/drain layer.