公开(公告)号：US20240405113A1

公开(公告)日：2024-12-05

申请号：US18537916

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yang XU ,  Gyeom KIM ,  Young Kwang KIM ,  Jin Bum KIM ,  Yoon Tae NAM ,  Kyung Bin CHUN ,  Ryong HA ,  Yoon HEO

IPC: H01L29/775 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate. An active pattern extends in a first horizontal direction on the substrate. First to third nanosheets are sequentially spaced apart from each other in a vertical direction on the active pattern. A gate electrode extends in a second horizontal direction on the active pattern and surrounds the first to third nanosheets. A source/drain region includes a first layer disposed along side walls and a bottom surface of a source/drain trench and a second layer filling the source/drain trench. The second layer includes a first lower side wall facing a side wall of the first nanosheet and an opposite second lower side wall. A lower surface connects the first and second lower side walls and extends in the first horizontal direction. The first and second lower side walls of the second layer extend to have a constant slope in opposite directions to each other.