公开(公告)号：US20230253527A1

公开(公告)日：2023-08-10

申请号：US18103629

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongseok CHOI ,  Suyeol LEE ,  Jeongwook LEE ,  Youngjin CHOI

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/382 ,  H01L33/32 ,  H01L33/06 ,  H01L33/24

Abstract: A semiconductor light-emitting device includes a first conductivity-type semiconductor layer having, in an upper portion thereof, a plurality of rods spaced apart from each other, a plurality of active layers respectively formed on upper surfaces of the plurality of rods, a plurality of second conductivity-type semiconductor layers respectively formed on upper surfaces of the plurality of active layers, an insulating spacer conformally formed between the plurality of rods, surrounding all sidewalls of each of the plurality of active layers, and covering portions of sidewalls of each of the plurality of second conductivity-type semiconductor layers, a first electrode layer in contact with a lower portion of the first conductivity-type semiconductor layer, and a second electrode layer filling an inner space of the insulating spacer and in contact with the plurality of second conductivity-type semiconductor layers.

公开(公告)号：US20210242369A1

公开(公告)日：2021-08-05

申请号：US17022496

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin CHOI ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Yongseok CHOI ,  Youngjo TAK ,  Jonghoon HA

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L27/15

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.

公开(公告)号：US20210408327A1

公开(公告)日：2021-12-30

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo TAK ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Youngjin CHOI ,  Yongseok CHOI ,  Jonghoon HA

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.