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公开(公告)号:US20210242369A1
公开(公告)日:2021-08-05
申请号:US17022496
申请日:2020-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjin CHOI , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Yongseok CHOI , Youngjo TAK , Jonghoon HA
Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
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公开(公告)号:US20210408327A1
公开(公告)日:2021-12-30
申请号:US17352708
申请日:2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngjo TAK , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Youngjin CHOI , Yongseok CHOI , Jonghoon HA
Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.
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