公开(公告)号：US10895589B2

公开(公告)日：2021-01-19

申请号：US16882884

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-han Choi ,  Tae-hwang Kong ,  Kwang-ho Kim ,  Sang-ho Kim ,  Se-Ki Kim ,  Jun-hyeok Yang ,  Sung-yong Lee ,  Yong-jin Lee

IPC: G01R19/14 ,  G05F1/46 ,  H02J50/10 ,  H02J7/00 ,  H02J50/80

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

公开(公告)号：US10690703B2

公开(公告)日：2020-06-23

申请号：US15868172

申请日：2018-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-han Choi ,  Tae-hwang Kong ,  Kwang-ho Kim ,  Sang-ho Kim ,  Se-ki Kim ,  Jun-hyeok Yang ,  Sung-yong Lee ,  Yong-jin Lee

IPC: G01R19/14 ,  H02J7/02 ,  G05F1/46 ,  H02J50/10 ,  H02J50/80 ,  H02J7/00

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

公开(公告)号：US20180231590A1

公开(公告)日：2018-08-16

申请号：US15868172

申请日：2018-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-han Choi ,  Tae-hwang Kong ,  Kwang-ho Kim ,  Sang-ho Kim ,  Se-ki Kim ,  Jun-hyeok Yang ,  Sung-yong Lee ,  Yong-jin Lee

IPC: G01R19/14 ,  G05F1/46 ,  H02J7/02 ,  H02J7/00

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.